Satoshi Kodama

Objectives and specification of the SELENE Multiband Imager

Makiko Ohtake, J. Haruyama, T. Mastunaga, 2006 .

InP/InGaAs uni-travelling-carrier photodiode with 220 GHz bandwidth

Hiroshi Ito, Tomofumi Furuta, Tadao Ishibashi, 1999 .

GaAs Photonic Crystals on SiO2Fabricated by Very-High-Frequency Anode-Coupled Reactive Ion Etching and Wafer Bonding

Masaya Notomi, Tomofumi Furuta, Toshiaki Tamamura, 2000 .

InP/InGaAs uni-travelling-carrier photodiode with 310 GHz bandwidth

Hiroshi Ito, Tomofumi Furuta, Tadao Ishibashi, 2000 .

60 GHz high output power uni-travelling-carrier photodiodes with integrated bias circuit

Hiroshi Ito, Tomofumi Furuta, Tadao Ishibashi, 2000 .

Hybrid silicon evanescent laser fabricated with a silicon waveguide and III-V offset quantum wells.

John Bowers, Alexander Fang, Satoshi Kodama, 2005, Optics express.