Akihiro Wakahara

发表

A Request for Sophistication of “KOSEN” from the Viewpoint of Spiral-up Education System for Advanced Practical Engineers

Kiyokatsu Jinno, Akihiro Wakahara, 2013 .

Growth of Carbon Nanotubes within Porous Alumina Nano - Hole with Defined Diameter and Location

Takayuki Kobayashi, Akira Yoshida, Woo-Jin Lee, 2003 .

Study of Proton Irradiation Effects on p- and n-Type GaN Based-on Two-Terminal Resistance Dependence on 380keV Proton Fluence

Yuki Okada, Hiroshi Okada, Akihiro Wakahara, 2014, IEICE Trans. Electron..

Design and Fabrication of Large Scale Micro-LED Arrays and Silicon Driver for OEIC Devices

Hiroshi Okada, Akihiro Wakahara, Sang-Baie Shin, 2012, IEICE Trans. Electron..

Light emission from rare-earth-implanted GaN expected for full-color display

Akira Yoshida, Akihiro Wakahara, Yoshie Nakanishi, 2003, Other Conferences.

[Young Scientist Presentation Award Speech] Development of large-scale optoelectronic integration circuits using GaN-based LED

Shota Nakagawa, Hiroshi Okada, Akihiro Wakahara, 2016 .

Light emitting diodes based on GaPN/Si for optoelectronic integrated circuits

Yuzo Furukawa, Akihiro Wakahara, Hiroo Yonezu, 2007, SPIE Optics East.

Monolithic Integration of III-V Active Devices into Silicon Platform for Optoelectronic Integrated Circuits

Hiroo Yonezu, Yuzo Furukawa, Akihiro Wakahara, 2008, IEICE Trans. Electron..

Plasma enhanced chemical vapor deposition of ZnO thin films

R. M. Mehra, Akihiro Wakahara, Akira Yoshida, 2006 .

Epitaxial growth of high quality ZnO:Al film on silicon with a thin γ-Al2O3 buffer layer

Makoto Ishida, R. M. Mehra, Akihiro Wakahara, 2003 .

Fabrication and optical properties of regularly arranged GaN-based nanocolumns on Si substrate

Hiroshi Okada, Akihiro Wakahara, Hiroto Sekiguchi, 2019, Journal of Vacuum Science & Technology B.

Heteroepitaxial growth of GaN on γ-Al2O3/Si substrate by organometallic vapor phase epitaxy

Makoto Ishida, Hiroshi Okada, Akihiro Wakahara, 2002 .

Doping mechanism in aluminum doped zinc oxide films

R. M. Mehra, Akihiro Wakahara, Akira Yoshida, 2004 .

Highly conductive and transparent aluminum-doped zinc oxide thin films prepared by pulsed laser deposition in oxygen ambient

R. M. Mehra, Akihiro Wakahara, Akira Yoshida, 2001 .

Hydride Vapor Phase Epitaxy of GaN on NdGaO3 Substrate and Realization of Freestanding GaN Wafers with 2-inch Scale

Osamu Oda, Akihiro Wakahara, Takenori Yamamoto, 1999 .

Growth and characterization of ZnGeN2 by using remote‐plasma enhanced metalorganic vapor phase epitaxy

Hiroshi Okada, Akihiro Wakahara, Akira Yoshida, 2003 .

Growth of pit-free GaP on Si by suppression of a surface reaction at an initial growth stage

Yuzo Furukawa, Hiroshi Okada, Akihiro Wakahara, 2009 .

380 keV proton irradiation effects on photoluminescence of Eu-doped GaN

Hiroshi Okada, Akihiro Wakahara, Takeshi Ohshima, 2008 .