J. Faguet

发表

Elucidating the Mechanisms of Two Unique Phenomena Governed by Particle-Particle Interaction under DEP: Tumbling Motion of Pearl Chains and Alignment of Ellipsoidal Particles

Guigen Zhang, Jozef Brcka, J. Brcka, 2018, Micromachines.

Structure of the Electrical Double Layers: Insights from Continuum and Atomistic Simulations

N. Aluru, J. Brcka, Guigen Zhang, 2015 .

Reliability improvement of Cu/low-k dual damascene interconnects using the depo/etch barrier process by newly developed I-PVD

K. Motoyama, T. Tonegawa, H. Miyamoto, 2002, Proceedings of the IEEE 2002 International Interconnect Technology Conference (Cat. No.02EX519).

ZrO2 Monolayer as a Removable Etch Stop Layer for Thermal Al2O3 Atomic Layer Etching Using Hydrogen Fluoride and Trimethylaluminum

S. George, P. Abel, David R. Zywotko, 2020 .

Conformal isolation of high-aspect-ratio TSVs using a low-ź dielectric deposited by filament-assisted CVD

K. Ichiki, V. Jousseaume, T. Mourier, 2017 .

Mechanism understanding in cryo atomic layer etching of SiO2 based upon C4F8 physisorption

P. Lefaucheux, R. Dussart, T. Tillocher, 2021, Scientific reports.

Filament Assisted Chemical Vapor Deposited organosilicate as chemical layer for nanometric hydrocarbon gas sensors

V. Jousseaume, E. Ollier, C. Yeromonahos, 2018, Sensors and Actuators B: Chemical.

The role of physisorption in the cryogenic etching process of silicon

C. Cardinaud, A. Girard, P. Lefaucheux, 2019, Japanese Journal of Applied Physics.

Wet Atomic Layer Etching of Copper Structures for Highly Scaled Copper Hybrid Bonding and Fully Aligned Vias

P. Abel, S. Arkalgud, J. Faguet, 2022, 2022 IEEE 72nd Electronic Components and Technology Conference (ECTC).

Elucidating the DEP phenomena using a volumetric polarization approach with consideration of the electric double layer.

Guigen Zhang, Jozef Brcka, J. Brcka, 2017, Biomicrofluidics.

Cryo atomic layer etching of SiO2 by C4F8 physisorption followed by Ar plasma

P. Lefaucheux, R. Dussart, T. Tillocher, 2019, Applied Physics Letters.

Rapid atomic layer etching of Al2O3 using sequential exposures of hydrogen fluoride and trimethylaluminum with no purging

S. George, David R. Zywotko, J. Faguet, 2018, Journal of Vacuum Science & Technology A.

Cryogenic nanoscale etching of silicon nitride selectively to silicon by alternating SiF4/O2 and Ar plasmas

C. Cardinaud, H. Kim, A. Girard, 2022, Journal of Vacuum Science & Technology A.

Single-chamber filament-assisted chemical vapor deposition of polymer and organosilicate films for air gap interconnect formation

J. Brcka, Junjun Liu, J. Faguet, 2011 .

Initiated-Chemical Vapor Deposition of Polymer Thin Films: Unexpected Two-Regime Growth

V. Jousseaume, M. Veillerot, F. D’Agosto, 2017 .

Monolithic Circuits for 12 GHz Direct Broadcasting Satellite Reception

C. Tsironis, C. Kermarrec, J. Faguet, 1982 .