Yang Liu

发表

Influence of Cu dopant on the structure and optical properties of ZnO thin films prepared by MOCVD

Yingmin Luo, G. Du, Hongwei Liang, 2015, Journal of Materials Science: Materials in Electronics.

Crack-free ultraviolet AlGaN/GaN distributed Bragg reflectors grown by MOVPE on 6H-SiC(0 0 0 1)

Pengcheng Tao, G. Du, Hongwei Liang, 2014 .

Enhanced output power of near-ultraviolet LEDs with AlGaN/GaN distributed Bragg reflectors on 6H-SiC by metal-organic chemical vapor deposition

Yingmin Luo, Pengcheng Tao, G. Du, 2015 .

Crack-free AlGaN/GaN distributed Bragg reflectors synthesized by insertion of a thin SiNx interlayer grown on 6H-SiC substrate by metal–organic chemical vapor deposition

Yingmin Luo, Wenping Guo, Pengcheng Tao, 2014 .

Improvement of quality and strain relaxation of GaN epilayer grown on SiC substrate by in situ SiNx interlayer

Dechao Yang, G. Du, Hongwei Liang, 2013, Journal of Materials Science: Materials in Electronics.

Improvement of crystal quality and UV transparence of dielectric Ga2O3 thin films via thermal annealing in N2 atmosphere

J. Bian, Yingmin Luo, H. Zhang, 2012, Journal of Materials Science: Materials in Electronics.

Synthesis of GaN network by nitridation of hexagonal ε-Ga2O3 film

G. Du, Yuanpeng Chen, Hongwei Liang, 2017, Journal of Materials Science: Materials in Electronics.

Introducing Ga2O3 thin films as novel electron blocking layer to ZnO/p-GaN heterojunction LED

J. Bian, Yuanda Liu, G. Du, 2012 .

Rediscovery of the Role of the i-Layer in n-ZnO/SiO2/p-GaN Through Observations from Both the ZnO and GaN Sides

J. Bian, Yingmin Luo, Yuanda Liu, 2012, Journal of Electronic Materials.

Strain and microstructures of GaN epilayers with thick InGaN interlayer grown by MOCVD

Jianxun Liu, Yingmin Luo, Huolin Huang, 2017 .

Degradation Mechanism of Crystalline Quality and Luminescence in In0.42Ga0.58N/GaN Double Heterostructures with Porous InGaN Layer

Jianxun Liu, Yingmin Luo, Huolin Huang, 2017 .

Influence of Sb valency on the conductivity type of Sb-doped ZnO

Yingmin Luo, G. Du, Yuanpeng Chen, 2015 .

J. Bian, Yingmin Luo, Yuanda Liu, 2010 .

n-ZnO/p-GaN heterojunction light-emitting diodes with a polarization-induced graded-p-AlxGa1−xN electron-blocking layer

Yuanda Liu, G. Du, Hezhi Zhang, 2013 .

The influence of reactor height adjustment on properties in GaN films grown on 6H-SiC by metal organic chemical vapor deposition

Yingmin Luo, Pengcheng Tao, G. Du, 2014, Journal of Materials Science: Materials in Electronics.

The properties of reversed polarization yellow InGaN-GaN MQWs in p-side down structure grown by metal–organic chemical vapor deposition on sapphire substrate

Yingmin Luo, Wenping Guo, G. Du, 2014 .

Influence of high-pressure hydrogen treatment on structural and electrical properties of ZnO thin films

J. Bian, G. Du, Jianze Zhao, 2010 .

High-power integrated superluminescent light source

Yang Liu, Guotong Du, Chengdong Xu, 2003 .

The lattice distortion of β-Ga2O3 film grown on c-plane sapphire

Xiaona Li, Pengcheng Tao, G. Du, 2015, Journal of Materials Science: Materials in Electronics.

Growth Pressure Controlled Nucleation Epitaxy of Pure Phase ε- and β-Ga2O3 Films on Al2O3 via Metal–Organic Chemical Vapor Deposition

G. Du, Yuanpeng Chen, Q. Abbas, 2018 .

Study of the thermal stability of the H-related donors in high resistivity ZnO:Cu thin films by high-pressure H2 treatment

Yuanda Liu, G. Du, C. Ling, 2013 .

Comparative investigation of three types of ethanol sensor based on NiO-SnO2 composite nanofibers

Xiangping Li, G. Du, Guoguang Wu, 2012 .

Influence of N2 and O2 annealing treatment on the optical bandgap of polycrystalline Ga2O3:Cu films

G. Du, Yi Cheng, Rensheng Shen, 2013 .

Indium Incorporation Induced Morphological Evolution and Strain Relaxation of High Indium Content InGaN Epilayers Grown by Metal–Organic Chemical Vapor Deposition

Jianxun Liu, Yingmin Luo, G. Du, 2017 .

Anomalous indium incorporation and optical properties of high indium content InGaN grown by MOCVD

Jianxun Liu, Yingmin Luo, Long Yan, 2018 .

Preparation of high-quality CuGa2O4 film via annealing process of Cu/β-Ga2O3

Jianjun Shi, Heqiu Zhang, Yang Liu, 2019, Journal of Materials Science.

Vertically conducting deep-ultraviolet light-emitting diodes with interband tunneling junction grown on 6H-SiC substrate

Pengcheng Tao, G. Du, Yuantao Zhang, 2016 .

Unintentionally doped high resistivity GaN layers with an InGaN interlayer grown by MOCVD

Jianxun Liu, Yingmin Luo, Huolin Huang, 2016 .

Effect of growth pressure on the characteristics of β-Ga2O3 films grown on GaAs (1 0 0) substrates by MOCVD method

Yingmin Luo, G. Du, Yuanpeng Chen, 2015 .

Band gap broadening and photoluminescence properties investigation in Ga2O3 polycrystal

Zhenzhong Zhang, Yuanda Liu, G. Du, 2013, Journal of Materials Science: Materials in Electronics.

Stress State of GaN Epilayer Grown on Sapphire and 6H-SiC Substrates

Dechao Yang, Yingmin Luo, G. Du, 2013 .

Improved quality of GaN epilayer grown on porous SiC substrate by in situ H2 pre-treatment

Dechao Yang, G. Du, Rensheng Shen, 2013, Journal of Materials Science: Materials in Electronics.

Low resistivity ohmic contacts on lightly doped n-type β-Ga2O3 using Mg/Au

Jianjun Shi, Heqiu Zhang, Q. Abbas, 2019, Journal of Materials Science: Materials in Electronics.

Current transport mechanism of Mg/Au ohmic contacts to lightly doped n-type β-Ga2O3

Jianjun Shi, Heqiu Zhang, Q. Abbas, 2019, Journal of Semiconductors.

Improving the quality of GaN epilayer by preparing a novel patterned sapphire substrate

Dechao Yang, G. Du, Zhennan Yu, 2013, Journal of Materials Science: Materials in Electronics.

Preparation of High Al Content (AlxGa1−x)2O3 Films by Low-Pressure Reactive Vapor Deposition on Sapphire Substrates

Z. Jia, Jianjun Shi, Heqiu Zhang, 2020 .

A preliminary study of SF6 based inductively coupled plasma etching techniques for beta gallium trioxide thin film

Yingmin Luo, G. Du, Yuanpeng Chen, 2015 .

Influence of annealing temperature on the properties of Ga2O3:Cu films

Dechao Yang, G. Du, Yi Cheng, 2013 .

Evolution of the crystallographic planes of cone-shaped patterned sapphire substrate treated by wet etching

Dechao Yang, G. Du, Yuantao Zhang, 2014 .

Low Al-composition p-GaN/Mg-doped Al0.25Ga0.75N/n+-GaN polarization-induced backward tunneling junction grown by metal-organic chemical vapor deposition on sapphire substrate

Yingmin Luo, Wenping Guo, Pengcheng Tao, 2014, Scientific Reports.

Negative differential resistance in low Al-composition p-GaN/Mg-doped Al0.15Ga0.85N/n+-GaN hetero-junction grown by metal-organic chemical vapor deposition on sapphire substrate

Pengcheng Tao, G. Du, Rensheng Shen, 2014 .

Improvement of the quality of GaN epilayer by combining a SiNx interlayer and changed GaN growth mode

Dechao Yang, Yingmin Luo, G. Du, 2013, Journal of Materials Science: Materials in Electronics.

Improvement of the Quality of a GaN Epilayer by Employing a SiNx Interlayer

Dechao Yang, Yingmin Luo, G. Du, 2012 .

A Study of GaN Grown on SiH 4 Pre-Treated 6H-SiC Substrates

Yingmin Luo, G. Du, Rensheng Shen, 2012 .