Noboru Sakimura

发表

Shared Write-Selection Transistor Cell and Leakage-Replication Read Scheme for Large Capacity MRAM Macros

Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, 2009, IEICE Trans. Electron..

Demonstration of a Nonvolatile Processor Core Chip with Software-Controlled Three-Terminal MRAM Cells for Standby-Power Critical Applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2013 .

Writing Circuitry for Toggle MRAM to Screen Intermittent Failure Mode

Shuichi Tahara, Hiromitsu Hada, Takeshi Honda, 2007, IEICE Trans. Electron..

A 90nm 12ns 32Mb 2T1MTJ MRAM

Yuichi Ito, Hiroaki Honjo, Yosuke Kobayashi, 2009, 2009 IEEE International Solid-State Circuits Conference - Digest of Technical Papers.

High-speed simulator including accurate MTJ models for spintronics integrated circuit design

Hiroki Koike, Tetsuo Endoh, Takahiro Hanyu, 2012, 2012 IEEE International Symposium on Circuits and Systems.

27.4 A 90nm 12ns 32Mb 2T1MTJ MRAM

Naoki Kasai, S. Miura, Hiroaki Honjo, 2009 .

Soft-Delay-Error Evaluation in Content-Addressable Memory

Naoya Onizawa, Takahiro Hanyu, Shoun Matsunaga, 2014, 2014 IEEE 44th International Symposium on Multiple-Valued Logic.

Nonvolatile logic-in-memory array processor in 90nm MTJ/MOS achieving 75% leakage reduction using cycle-based power gating

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2013, 2013 IEEE International Solid-State Circuits Conference Digest of Technical Papers.

A delay circuit with 4-terminal magnetic-random-access-memory device for power-efficient time- domain signal processing

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Symposium on Circuits and Systems (ISCAS).

A compact low-power nonvolatile flip-flop using domain-wall-motion-device-based single-ended structure

Daisuke Suzuki, Tetsuo Endoh, Takahiro Hanyu, 2014, IEICE Electronics Express.

A non-volatile reconfigurable offloader for wireless sensor nodes

Yuichi Nakamura, Makoto Miyamura, Shogo Nakaya, 2012, CARN.

Nonvolatile Logic-in-Memory LSI Using Cycle-Based Power Gating and its Application to Motion-Vector Prediction

Daisuke Suzuki, Shoji Ikeda, Tetsuo Endoh, 2015, IEEE Journal of Solid-State Circuits.

10.5 A 90nm 20MHz fully nonvolatile microcontroller for standby-power-critical applications

Tetsuo Endoh, Takahiro Hanyu, Hiroaki Honjo, 2014, 2014 IEEE International Solid-State Circuits Conference Digest of Technical Papers (ISSCC).

A Non-volatile Reconfigurable Offloader for Wireless Sensor Nodes

Yuichi Nakamura, Makoto Miyamura, Shogo Nakaya, 2013, IPSJ Trans. Syst. LSI Des. Methodol..

A Nonvolatile Associative Memory-Based Context-Driven Search Engine Using 90 nm CMOS/MTJ-Hybrid Logic-in-Memory Architecture

Vincent Gripon, Tetsuo Endoh, Naoya Onizawa, 2014, IEEE Journal on Emerging and Selected Topics in Circuits and Systems.

Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs

Naoki Kasai, Ryusuke Nebashi, Noboru Sakimura, 2009, IEEE J. Solid State Circuits.

Complementary 5T-4MTJ nonvolatile TCAM cell circuit with phase-selective parallel writing scheme

Tetsuo Endoh, Takahiro Hanyu, Shoun Matsunaga, 2014, IEICE Electron. Express.

Nonvolatile Magnetic Flip-Flop for Standby-Power-Free SoCs

Ryusuke Nebashi, Noboru Sakimura, Tadahiko Sugibayashi, 2008, IEEE Journal of Solid-State Circuits.

MTJ/MOS-hybrid logic-circuit design flow for nonvolatile logic-in-memory LSI

Takahiro Hanyu, Masanori Natsui, Noboru Sakimura, 2013, 2013 IEEE International Symposium on Circuits and Systems (ISCAS2013).

MRAM Applications Using Unlimited Write Endurance

Shuichi Tahara, Takeshi Honda, Noboru Sakimura, 2007, IEICE Trans. Electron..

Programmable cell array using rewritable solid-electrolyte switch integrated in 90nm CMOS

Masato Motomura, Toshitsugu Sakamoto, Hiromitsu Hada, 2011, 2011 IEEE International Solid-State Circuits Conference.

Evaluation of Soft-Delay-Error Effects in Content-Addressable Memory

Naoya Onizawa, Takahiro Hanyu, Ryusuke Nebashi, 2016, J. Multiple Valued Log. Soft Comput..

Material Stack Design With High Tolerance to Process-Induced Damage in Domain Wall Motion Device

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014, IEEE Transactions on Magnetics.

Three-terminal magnetic tunneling junction device with perpendicular anisotropy CoFeB sensing layer

Hiroaki Honjo, Kunihiko Ishihara, Keizo Kinoshita, 2014 .

Magnetic tunneling junction with Fe/NiFeB free layer for magnetic logic circuits

Hiroaki Honjo, Hideo Ohno, Sadahiko Miura, 2012 .