H. Brion

发表

Infrared contrast of inclusions in CdTe

H. Brion, C. Mewes, I. Hahn, 1993 .

Electronic Structure of Nitric Oxide

M. Yamazaki, H. Brion, C. Moser, 1959 .

Alternative Method for Calculating SCF Orbitals

R. Lefebvre, H. Brion, C. Moser, 1955 .

High‐temperature creep of Ge under low stress

D. Hoehl, J. Heydenreich, F. Edelman, 1995 .

Hall effect in directionally solidified and deformed eutectic silver–copper alloys with fibre structure

G. Frommeyer, H. Brion, 1981 .

The effect of solutes on the dynamical recovery of silicon and germanium

H. Brion, K. Ahlborn, H. Siethoff, 1991 .

High temperature creep and transmission electron microscopy of GaAs

P. Haasen, P. Veyssiére, H. Brion, 1991 .

High‐Temperature Creep of GaAs

P. Haasen, H. Brion, H. Siethoff, 1991 .

Dynamical recovery of 〈111〉 germanium

W. Schröter, H. Brion, K. Ahlborn, 1986 .

Mechanism of Stage IV Work Hardening at High Temperatures

P. Haasen, H. Brion, H. Siethoff, 1985 .

New stages in stress - strain curves of germanium at high temperatures

W. Schröter, H. Brion, H. Siethoff, 1981 .

Self-Diffusion and Dynamical Recovery in Silicon at High Temperatures

W. Schröter, H. Brion, H. Siethoff, 1979, April 16.

Effect of dissolved small molecules on the mechanical relaxation behavior of polycarbonate

R. Kirchheim, I. Böhm, H. Brion, 2000 .

Screw dislocation networks generated in Ge and Si by stage IV compression

P. Haasen, H. Brion, 1985 .

Measurement of dislocation velocities in Cu-Al single crystalsI?

M. Kleintges, P. Haasen, H. Brion, 1977 .

The influence of non‐magnetic particles on the coercive force and the initial susceptibility

E. Nembach, H. Brion, 1974 .

Yield point and dislocation mobility in silicon and germanium

W. Schröter, Hans Siethoff, Wolfgang Schröter, 1983 .

Dynamical recovery and self-diffusion in InP

H. Brion, J. Völkl, K. Ahlborn, 1988 .

Electronic Structure of Carbon Monoxide

H. Brion, C. Moser, 1960 .

Plastic Deformation of GaSb and the Influence of Stacking-Fault Energy on Dynamical Recovery of Semiconductors

W. Schröter, H. Brion, H. Siethoff, 1991 .

YIELD POINT OF AS-GROWN AND PREDEFORMED GAAS:ZN

H. Brion, H. Siethoff, 1998 .

The yield point of In‐doped GaAs between 500 and 900 °C

H. Brion, J. Völkl, H. Siethoff, 1993 .

A regime of the yield point of silicon at high temperatures

W. Schröter, Hans Siethoff, Wolfgang Schröter, 1999 .

The yield point of highly-doped germanium

P. Haasen, H. Brion, H. Siethoff, 1971 .

The influence of sorption of small molecules on the yield stress of glassy polymers

R. Kirchheim, H. Brion, J. Ulrich, 1999 .

Dynamical Recovery of In-Doped 〈123〉 GaAs†

H. Brion, K. Ahlborn, H. Siethoff, 1993 .

Effect of Aging and Conditioning on Diffusion and Sorption of Small Molecules in Polymer Glasses

P. Pekarski, R. Kirchheim, J. Hampe, 2000 .

Localizability of Electrons in Atoms and Molecules—Application to the Study of the Notion of Shell and of the Nature of Chemical Bonds

R. Daudel, S. Odiot, H. Brion, 1955 .

Diffusion of Small molecules in glassy polymers

R. Kirchheim, H. Brion, M. Pönitsch, 1997 .

Volume Change of Glassy Polymers by Sorption of Small Molecules and Its Relation to the Intermolecular Space

R. Kirchheim, H. Brion, R. Plaetschke, 1997 .