A. Jacobs

发表

Nanowire-quantum-dot solar cells and the influence of nanowire length on the charge collection efficiency

E. Aydil, D. Norris, Kurtis S. Leschkies, 2009 .

Laser-induced Sub-millisecond Structural Formation Kinetics in Block Copolymers

A. Jacobs, 2017 .

Kinetics of Block Copolymer Phase Segregation during Sub-millisecond Transient Thermal Annealing

C. Ober, Hui Peng, M. Thompson, 2016 .

μ-Rainbow: CdSe Nanocrystal Photoluminescence Gradients via Laser Spike Annealing for Kinetic Investigations and Tunable Device Design.

M. Thompson, T. Hanrath, B. Treml, 2016, Nano letters.

Lateral Temperature-Gradient Method for High-Throughput Characterization of Material Processing by Millisecond Laser Annealing.

B. Jung, M. Thompson, B. Treml, 2016, ACS combinatorial science.

Process Optimization for Selective Area Doping of GaN by Ion Implantation

M. Goorsky, K. Hobart, T. Anderson, 2021, Journal of Electronic Materials.

Effect of high temperature, high pressure annealing on GaN drift layers for vertical power devices

E. Beam, J. Xie, K. Hobart, 2018, Journal of Crystal Growth.

Role of Capping Material and GaN Polarity on Mg Ion Implantation Activation

T. Anderson, F. Kub, J. Hite, 2019, physica status solidi (a).

Reduced Contact Resistance in GaN Using Selective Area Si Ion Implantation

K. Hobart, A. Koehler, T. Anderson, 2019, IEEE Transactions on Semiconductor Manufacturing.

(Invited) Vertical GaN Devices Enabled By Selective Area P-Type Doping

Alan G. Jacobs, Francis J. Kub, Travis J Anderson, 2017 .

Polarity dependent implanted p-type dopant activation in GaN

T. Anderson, F. Kub, J. Hite, 2019, Japanese Journal of Applied Physics.

Temperature Excursions Due to the Reaction Heat Produced by Atomic Layer Deposition on Nanostructured Substrates

M. Wolak, J. Wollmershauser, B. Feigelson, 2020 .

A review of band structure and material properties of transparent conducting and semiconducting oxides: Ga2O3, Al2O3, In2O3, ZnO, SnO2, CdO, NiO, CuO, and Sc2O3

M. Schubert, M. Tadjer, Yuhao Zhang, 2022, Applied Physics Reviews.

A Simple Edge Termination Design for Vertical GaN P-N Diodes

Michael R. Hontz, D. Georgiev, K. Hobart, 2022, IEEE Transactions on Electron Devices.

Characterization and Modeling of a 1.3 kV Vertical GaN Diode

Michael R. Hontz, D. Georgiev, K. Hobart, 2022, 2022 IEEE Applied Power Electronics Conference and Exposition (APEC).

Long-wavelength dielectric properties and infrared active optical phonon modes of molecular beam epitaxy ScxAl1−xN determined by infrared spectroscopic ellipsometry

E. Jin, M. Hardy, M. Tadjer, 2020, Applied Physics Letters.

Activation of implanted Si, Ge, and Sn donors in high-resistivity halide vapor phase epitaxial β-Ga2O3:N with high mobility

J. Freitas, K. Hobart, K. Sasaki, 2022, Applied Physics Letters.

Atomic-scale characterization of structural damage and recovery in Sn ion-implanted β-Ga2O3

M. Tadjer, Honggyun Kim, F. Ren, 2022, Applied Physics Letters.

Impact of Anode Thickness on Breakdown Mechanisms in Vertical GaN PiN Diodes with Planar Edge Termination

K. Hobart, R. Kaplar, B. Gunning, 2022 .

Optimizing performance and yield of vertical GaN diodes using wafer scale optical techniques

K. Hobart, T. Anderson, R. Kaplar, 2022, Scientific reports.

Efficient Activation and High Mobility of Ion-Implanted Silicon for Next-Generation GaN Devices

K. Hobart, M. Tadjer, J. Hite, 2023, Crystals.

Using machine learning with optical profilometry for GaN wafer screening

K. Hobart, R. Kaplar, M. Mastro, 2023, Scientific Reports.

Control of polystyrene-block-poly(methyl methacrylate) directed self-assembly by laser-induced millisecond thermal annealing

Christopher K. Ober, Byungki Jung, Michael O. Thompson, 2015 .

Understanding of PS-b-PMMA phase segregation under laser-induced millisecond thermal annealing

Christopher K. Ober, Michael O. Thompson, Alan G. Jacobs, 2015, Advanced Lithography.

Delta-doped β-(AlxGa1−x)2O3/Ga2O3 heterostructure field-effect transistors by ozone molecular beam epitaxy

K. Hobart, A. Koehler, T. Anderson, 2021 .

Ultrafast Self-Assembly of Sub-10 nm Block Copolymer Nanostructures by Solvent-Free High-Temperature Laser Annealing.

C. Ober, M. Thompson, Clemens Liedel, 2017, ACS applied materials & interfaces.

Control of PS-b-PMMA directed self-assembly registration by laser induced millisecond thermal annealing

Christopher K. Ober, Byungki Jung, Michael O. Thompson, 2014, Advanced Lithography.

High growth-rate MOCVD homoepitaxial [beta]-Ga2O3 films and MOSFETs for power electronics applications

J. Freitas, A. Osinsky, K. Hobart, 2021 .

NiO/β-(AlxGa1−x)2O3/Ga2O3 heterojunction lateral rectifiers with reverse breakdown voltage >7 kV

A. Osinsky, K. Hobart, J. S. Lundh, 2023, Journal of Vacuum Science & Technology A.

Characterization of β-Ga2O3 homoepitaxial films and MOSFETs grown by MOCVD at high growth rates

J. Freitas, A. Osinsky, K. Hobart, 2020, Radar Sensor Technology XXV.

10-kV Ga2O3 Charge-Balance Schottky Rectifier Operational at 200 °C

K. Sasaki, M. Xiao, Yuhao Zhang, 2023, IEEE Electron Device Letters.

Development of High-Voltage Vertical GaN PN Diodes

A. Allerman, M. Crawford, O. Aktas, 2020, 2020 IEEE International Electron Devices Meeting (IEDM).

Scaled Projections of Empirically Verified Hybrid Edge Terminated Vertical GaN Diodes to 20 kV

Michael R. Hontz, A. Koehler, R. Khanna, 2023, 2023 IEEE 10th Workshop on Wide Bandgap Power Devices & Applications (WiPDA).