G. Richieri

发表

Defect Influence on the Electrical Properties of 4H-SiC Schottky Diodes

C. Pirri, E. Celasco, S. Porro, 2004 .

Defect characterization of 4H-SiC wafers for power electronic device applications

C. Pirri, S. Porro, C. Ricciardi, 2002 .

Wafer Level Integration of 3-D Heat Sinks in Power ICs

D. Pugliese, C. Pirri, S. Marasso, 2017, IEEE Transactions on Electron Devices.

Correlation between Defects and Electrical Properties of 4H-SiC Based Schottky Diodes

C. Pirri, M. Cocuzza, S. Porro, 2003 .

Marbled texture of sputtered Al/Si alloy thin film on Si

A. Chiodoni, K. Bejtka, E. Vittone, 2016 .

Plasma-assisted SiC oxidation for power device fabrication

S. Porro, C. Ricciardi, S. Ferrero, 2004 .

Low temperature growth of SiO2 on SiC by plasma enhanced chemical vapor deposition for power device applications

C. Ricciardi, S. Ferrero, L. Scaltrito, 2003 .

Intrinsic 4H-SiC parameters study by temperature behaviour analysis of Schottky diodes

C. Pirri, S. Ferrero, L. Scaltrito, 2006 .

Phase Formation at Rapid Thermal Annealing of Nickel Contacts on C-Face n-Type 4H-SiC

E. Bontempi, L. Depero, S. Porro, 2005 .

Design, Fabrication and Characterization of 1.5 mΩcm2, 800 V 4H-SiC n-Type Schottky Barrier Diodes

G. Ghione, F. Bonani, S. Porro, 2005 .

Structural characterisation of nickel silicide performed by two-dimensional X-ray microdiffraction

E. Bontempi, L. Depero, S. Porro, 2004 .

Structural and electrical characterization of epitaxial 4H–SiC layers for power electronic device applications

C. Pirri, M. Cocuzza, S. Porro, 2003 .

Surface analysis and defect characterization of 4H–SiC wafers for power electronic device applications

C. Pirri, M. Cocuzza, S. Porro, 2003 .