M. Lin

Single-Event Burnout Hardness for the 4H-SiC Trench-Gate MOSFETs Based on the Multi-Island Buffer Layer

Jianqun Yang, Ying Wang, Cheng-Hao Yu, 2019, IEEE Transactions on Electron Devices.

Performance Improvements of Random Dopant Fluctuation-Induced Variability in Negative Capacitance MOSFETS

M. Lin, Zhifeng Zhao, W. Lü, 2020, Fluctuation and Noise Letters.

Forward block characteristic of a novel anti-ESD RF SOI LIGBT with a buried P-type layer

M. Lin, R. Qi, H. P. Zhang, 2011, 2011 China-Japan Joint Microwave Conference.

Forward block characteristic of a novel RF SOI LDMOS with a buried P-type layer

M. Lin, X. Niu, S. Xu, 2010, 2010 IEEE International SOI Conference (SOI).

Process simulation of trench gate and plate and trench drain SOI nLDMOS with TCAD tools

M. Lin, H.P. Zhang, L. Xu, 2008, 2008 IEEE International Conference on Semiconductor Electronics.

A Comparative Study of Single-Event-Burnout for 4H-SiC UMOSFET

Ying Wang, Fei Cao, Xing-ji Li, 2022, IEEE Journal of the Electron Devices Society.