A. V. Korulin

发表

Features of the structural states of KNbO3 single crystals before and after fast-neutron irradiation

V. S. Ermakov, S. Stefanovich, A. Stash, 2017 .

Neutron irradiation-induced modification of electrical and structural properties of GaN epifilms grown on Al2O3 (0001) substrate

V. S. Ermakov, V. Boiko, V. Brudnyi, 2018, Semiconductor Science and Technology.

Electronic properties of p-GaN(Mg) irradiated with reactor neutrons

V. S. Ermakov, A. Polyakov, V. Boiko, 2014 .

Electronic properties and deep traps in electron-irradiated n-GaN

N. B. Smirnov, V. S. Ermakov, A. Polyakov, 2012 .

10 MeV electrons irradiation effects in variously doped n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Carrier Removal Rates and Deep Traps in Neutron Irradiated n-GaN Films

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Neutron transmutation doping effects in GaN

N. B. Smirnov, S. Pearton, A. Polyakov, 2010 .

On the electronic properties of GaSb irradiated with reactor neutrons and its charge neutrality level

V. S. Ermakov, V. Boiko, A. V. Korulin, 2015 .

Modification of the structural lattice parameters and electron spectra of n-GaAs films on sapphire on irradiation with reactor neutrons

V. Brudnyi, A. V. Korulin, N. Kolin, 2011 .

X-ray diffraction study of BaTiO3 single crystals before and after fast-neutron irradiation

V. S. Ermakov, S. Stefanovich, A. Stash, 2015 .

Deep electron and hole traps in neutron transmutation doped n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .

Neutron doping effects in epitaxially laterally overgrown n-GaN

N. B. Smirnov, S. Pearton, In‐Hwan Lee, 2011 .