Ai Hashimoto

Structural Characterization of a Ga2O3 Epitaxial Layer Grown on a Sapphire Substrate Using Cross-Sectional and Plan-View TEM/STEM Analysis

Takayuki Kobayashi, S. Motoyama, Ai Hashimoto, 2019 .

Detailed analysis of Ga-rich current pathways created in an n-Al0.7Ga0.3N layer grown on an AlN template with dense macrosteps

H. Amano, I. Akasaki, S. Chichibu, 2020, Applied Physics Express.

Discrete AlN mole fraction of n/12 (n = 4–8) in Ga-rich zones functioning as electron pathways created in nonflat AlGaN layers grown on high-miscut sapphire substrates

H. Amano, I. Akasaki, S. Chichibu, 2021 .

Low-energy cross-sectional cathodoluminescence analysis of the depth distribution of point defects in Si-ion-implanted β-Ga2O3

T. Uchida, K. Matsumura, R. Sugie, 2020, Applied Physics Express.

Cathodoluminescence Study of Damage Formation and Recovery in Si-ion-implanted β-Ga2O3

T. Uchida, K. Matsumura, R. Sugie, 2022, IEEE Journal of the Electron Devices Society.

Weak metastability of Al x Ga1−x N (x = 13/24, 15/24, 17/24) shown by analyzing AlGaN grown on AlN with dense macrosteps

H. Amano, S. Chichibu, M. Ippommatsu, 2022, Applied Physics Express.