J. Zeng

A new hybrid SOI LDMOS-IGBT power transistor

P. Mawby, M. Towers, K. Board, 1995, 1995 IEEE TENCON. IEEE Region 10 International Conference on Microelectronics and VLSI. 'Asia-Pacific Microelectronics 2000'. Proceedings.

Lateral high-voltage devices using an optimized variational lateral doping

K. Board, Xingbi Chen, Philip A. Mawby, 1996 .

THERMO‐ELECTRIC STUDY OF THE TRENCH‐GATE POWER VDMOS TRANSISTOR

K. Board, Philip A. Mawby, J. Zeng, 1994 .

Numerical analysis of a trench VDMOST structure with no quasi-saturation

K. Board, Philip A. Mawby, J. Zeng, 1995 .

Modelling of the quasisaturation behaviour in the high-voltage MOSFET with vertical trench gate

K. Board, Philip A. Mawby, J. Zeng, 1996 .

Hybrid field-dependent mobility model for the simulation of power VDMOSTs

K. Board, Philip A. Mawby, J. Zeng, 1996 .

Design of IGBTs for latch-up free operation

K. Board, Philip A. Mawby, J. Zeng, 1994 .

Electrothermal simulation of power vdmos transistors

P. Mawby, K. Board, J. Zeng, 1995 .

The impact of trench geometry and processing on the performance and reliability of low voltage power UMOSFETs

Levent Trabzon, Osama O. Awadelkarim, Jerzy Ruzyllo, 2001, 2001 IEEE International Reliability Physics Symposium Proceedings. 39th Annual (Cat. No.00CH37167).