N. Baidakova

发表

Kinetics of the Luminescence Response of Self-Assembled Ge(Si) Nanoislands Embedded in Two-Dimensional Photonic Crystals

Z. F. Krasilnik, S. Sergeev, M. Stepikhova, 2020 .

Time-resolved photoluminescence from self-assembled Ge(Si) islands in multilayer SiGe/Si and SiGe/SOI structures

D. N. Lobanov, A. Yablonskiy, A. Novikov, 2013 .

Photoluminescence excitation spectroscopy technique modified for studying structures with self-assembled Ge(Si)/Si(001) nanoislands

D. N. Lobanov, A. N. Yablonsky, A. Novikov, 2012 .

Formation of black silicon using SiGe self-assembled islands as a mask for selective anisotropic etching of silicon

Y. Kurokawa, N. Usami, M. Shaleev, 2018 .

Growth of light-emitting SiGe heterostructures on strained silicon-on-insulator substrates with a thin oxide layer

A. I. Bobrov, Z. F. Krasilnik, M. Drozdov, 2015 .

Formation and Optical Properties of Locally Strained Ge Microstructures Embedded into Cavities

N. Gusev, A. Yablonskiy, A. Novikov, 2021, Semiconductors.

Locally Strained Ge/SOI Structures with an Improved Heat Sink as an Active Medium for Silicon Optoelectronics

N. Gusev, A. Yablonskiy, D. Yurasov, 2019, Semiconductors.

Influence of the Growth Conditions and Doping Level on the Luminescence Kinetics of Ge:Sb Layers Grown on Silicon

A. Yablonskiy, D. Yurasov, A. Novikov, 2020 .

Effect of antimony doping on the energy of optical transitions in n-Ge layers grown on Si (001) and Ge (001) substrates

M. Drozdov, P. Yunin, V. Aleshkin, 2020 .

Influence of thermal annealing on the electrical and luminescent properties of heavily Sb-doped Ge/Si(001) layers

Z. F. Krasilnik, M. Drozdov, P. Yunin, 2018, Semiconductor Science and Technology.

Excitation spectra of photoluminescence and its kinetics in structures with self-assembled Ge:Si nanoislands

D. N. Lobanov, A. Yablonskiy, M. Shaleev, 2015 .

Electroluminescence of structures with self-assembled Ge(Si) nanoislands confined between strained Si layers

Z. F. Krasilnik, M. Shaleev, D. Yurasov, 2016 .

Optical monitoring of technological parameters during molecular-beam epitaxy

V. G. Remesnik, A. V. Goryunov, A. Luk'yanov, 2012 .

Formation of light-trapping structure using Ge islands grown by gas-source molecular beam epitaxy as etching masks

Y. Kurokawa, N. Usami, A. Novikov, 2018, Japanese Journal of Applied Physics.

Selective etching of Si, SiGe, Ge and its usage for increasing the efficiency of silicon solar cells

Y. Kurokawa, N. Usami, M. Shaleev, 2017 .

Formation and Properties of Locally Tensile Strained Ge Microstructures for Silicon Photonics

N. Gusev, A. Yablonskiy, D. Yurasov, 2018, Semiconductors.

Fiber-optic temperature sensor based on low-coherence interferometry without scanning

A. V. Goryunov, A. Luk'yanov, P. Volkov, 2013 .

Influence of Annealing on the Properties of Ge:Sb/Si(001) Layers with an Antimony Concentration Above Its Equilibrium Solubility in Germanium

M. Drozdov, D. Yurasov, A. Novikov, 2019, Semiconductors.