R. Pandya

发表

Effects of Hydrogenation on the Off-State of Polysilicon Thin Film Transistors

B. Khan, R. Pandya, 1987 .

Thickness Effects on the Activation Energy of Source-Drain Current in P and N Channel Polycrystalline Silicon Thin Film Transistors

B. Khan, R. Pandya, 1990 .

Characterization of Polycrystalline Silicon Thin Films by Photoluminescence

K. Shahzad, R. Pandya, 1990 .

Transient photocurrent response in polycrystalline silicon thin films

B. Khan, R. Pandya, 1987 .

ROOM TEMPERATURE LIGHT INDUCED ELECTRON SPIN RESONANCE IN UNDOPED HYDROGENATED AMORPHOUS SILICON (a-Si:H).

S. Zafar, E. Schiff, R. Pandya, 1986 .

The long-time drift mobility in aSi:H: Optical bias and temperature dependence

E. Schiff, K. Conrad, R. Pandya, 1984 .

Characterization of silicon-on-insulator field-effect structures by transient photoconductivity

B. Khan, R. Pandya, 1990 .

Differential photocurrent transient measurements in a-Si:H

E. Schiff, R. Pandya, 1983 .

A multiple-trapping model with optical bias

E. Schiff, R. Pandya, 1985 .

Elimination of Defects in Laser-Recrystallized SOI by Stress Relief

A. Martinez, E. Arnold, R. Pandya, 1987 .

Activation energy of source-drain current in hydrogenated and unhydrogenated polysilicon thin-film transistors

B. Khan, R. Pandya, 1990 .