S. Katakami

Spatial, LET and Range Dependence of Enhanced Charge Collection by Single Ion Strike in 4H-SiC MESFETs

T. Ohshima, T. Makino, S. Onoda, 2011, IEEE Transactions on Nuclear Science.

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.

Transient Response of Charge Collection by Single Ion Strike in 4H-SiC MESFETs

T. Ohshima, N. Iwamoto, S. Onoda, 2009, IEEE Transactions on Nuclear Science.

Improvement of Electrical Characteristics of Ion Implanted 4H-SiC MESFET on a Semi-Insulating Substrate

M. Arai, S. Ono, S. Katakami, 2007 .

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Kenji Fukuda, Hajime Okumura, Manabu Takei, 2014 .

Fabrication of a P-Channel SiC-IGBT with High Channel Mobility

Kenji Fukuda, Manabu Arai, Hiroyuki Fujisawa, 2013 .

Effect of Post-Oxidation Annealing in Wet O2 and N2O Ambient on Thermally Grown SiO2/4H-SiC Interface for P-Channel MOS Devices

Kenji Fukuda, Manabu Arai, Yoshiyuki Yonezawa, 2012 .

RF Characteristics of a Fully Ion-Implanted MESFET with Highly Doped Thin Channel Layer on a Bulk Semi-Insulating 4H-SiC Substrate.

M. Arai, S. Ono, S. Katakami, 2008 .

Development of ultrahigh voltage SiC power devices

K. Takao, T. Kimoto, D. Okamoto, 2014, 2014 International Power Electronics Conference (IPEC-Hiroshima 2014 - ECCE ASIA).