T. Motokawa

Half pitch 14 nm direct pattering with Nanoimprint lithography

T. Higashiki, T. Imamura, T. Nakasugi, 2018, 2018 IEEE International Electron Devices Meeting (IEDM).

Electrical properties of Si-doped GaAs layers grown on (411)A GaAs substrates by molecular beam epitaxy

S. Hiyamizu, N. Sano, K. Shinohara, 1996 .

GaAsAl0.3Ga0.7As resonant tunneling diodes with atomically flat interfaces grown on (411)A GaAs substrates by MBE

S. Hiyamizu, N. Sano, K. Shinohara, 1996 .

Extremely flat interfaces in GaAs/AlGaAs quantum wells with high Al content (0.7) grown on GaAs(411)A substrates by molecular beam epitaxy

S. Hiyamizu, N. Sano, K. Shinohara, 1995 .

Extremely Flat Interfaces in InxGa1-xAs/Al0.3Ga0.7As Quantum Wells Grown on (411)A GaAs Substrates by Molecular Beam Epitaxy.

Takahiro Kitada, Takeharu Motokawa, Satoshi Hiyamizu, 1997 .