A. Cascio

Effect of the epitaxial layer features on the reliability of medium blocking voltage power VDMOSFET during heavy ION exposure

F. Velardi, G. Busatto, F. Iannuzzo, 2003, Proceedings of the 7th European Conference on Radiation and Its Effects on Components and Systems, 2003. RADECS 2003..

Reliability of Medium Blocking Voltage Power VDMOSFET in Radiation Environment

A. Candelori, Francesco Iannuzzo, Giovanni Busatto, 2003, Microelectron. Reliab..

Single Event Effects Induced by Heavy Ion Irradiation in SiC Power MOSFETs

F. Velardi, G. Busatto, F. Iannuzzo, 2013 .

The Role of the Parasitic BJT Parameters on the Reliability of New Generation Power MOSFET during Heavy Ion Exposure

Francesco Iannuzzo, Giovanni Busatto, Alberto Porzio, 2004, Microelectron. Reliab..