D. F. Feklin

Molecular beam epitaxy of III-PxAs1 − x solid solutions: Mechanism of composition formation in the sublattice of a group V element

M. Putyato, B. Semyagin, E. A. Emelyanov, 2015 .

InGaAs/GaAs Quantum Wells Grown by MBE on Artificial GaAs/Si(001) Substrates

O. Pchelyakov, H. Ni, Z. Niu, 2014 .

Molecular beam epitaxy of solid solutions GaPxAs1−x: Effect of growth condition on the composition of group V sublattice

V. Preobrazhenskii, M. Putyato, B. Semyagin, 2013, 2013 14th International Conference of Young Specialists on Micro/Nanotechnologies and Electron Devices.

Formation of type-II InAs/GaSb strained short-period superlattices for IR photodetectors by molecular beam epitaxy

O. Pchelyakov, V. Preobrazhenskii, E. A. Emel’yanov, 2011 .

PHYSICAL AND ENGINEERING FUNDAMENTALS OF MICROELECTRONICS AND OPTOELECTRONICS Formation of Type-II InAs/GaSb Strained Short-Period Superlattices for IR Photodetectors by Molecular Beam Epitaxy

O. Pchelyakov, V. Preobrazhenskii, M. Putyato, 2011 .

Heteroepitaxy of AIIIBV films on vicinal Si(001) substrates

O. Pchelyakov, N. Haiqiao, V. Seleznev, 2014 .

FUNDAMENTAL PROBLEMS OF EPITAXY OF SEMICONDUCTOR NANOHETEROSTRUCTURES Heteroepitaxy of AB Films on Vicinal Si(001) Substrates

O. Pchelyakov, V. Seleznev, V. Preobrazhenskii, 2014 .