A. V. Mazalov

Influence of conditions of growth on the structural perfection of AlN layers obtained by the MOS-hydride Epitaxy Method

R. Akchurin, A. Marmalyuk, A. V. Mazalov, 2014 .

Change in the Properties of AlGaN/InGaN/GaN Structures during the Operation of Electron-Beam-Pumped and Optically Pumped Pulse-Periodic Lasers Based on Them

V. B. Studionov, V. Kozlovsky, A. V. Mazalov, 2019, Journal of Surface Investigation: X-ray, Synchrotron and Neutron Techniques.

Effect of growth temperature of GaN:Mg layer on internal quantum efficiency of LED structures with InGaN/GaN quantum wells

I. Romanov, A. Marmalyuk, V. Kopyev, 2014 .

Infrared, green, and blue-violet pulsed lasers based on semiconductor structures pumped by low-energy electron beam

V. B. Studionov, S. Ivanov, S. Sorokin, 2016, 2016 International Conference Laser Optics (LO).

Pulsed electron-beam-pumped laser based on AlGaN/InGaN/GaN quantum-well heterostructure

A. V. Mazalov, D. R. Sabitov, V. Kureshov, 2015 .

Research of acceptor impurity thermal activation in GaN: Mg epitaxial layers

R. Akchurin, A. Marmalyuk, A. V. Mazalov, 2016 .

Effect of the Barrier Thickness on the Optical Properties of InGaN/GaN/Al2O3 (0001) LED Heterostructures

I. Romanov, V. Novikov, V. Brudnyi, 2015 .