D. Yurasov

发表

New approach to the X-ray diffraction analysis of test structures during flow calibration in epitaxial growth reactors

P. Yunin, A. Novikov, Y. Drozdov, 2012, Journal of Surface Investigation. X-ray, Synchrotron and Neutron Techniques.

Direct comparison of superlattice periods measured with X-ray diffractometry and optical interferometry

M. Drozdov, P. Yunin, A. Novikov, 2011 .

Control of surface dip diameter in Si-based photonic nanostructures by changing growth temperature of Ge quantum dot multilayer structures and its impact on their optical properties

N. Usami, T. Tayagaki, Y. Hoshi, 2015 .

FABRICATION, TREATMENT, AND TESTING OF MATERIALS AND STRUCTURES Study of the Transition of the Epitaxial Ge Film from LayertoLayer to ThreeDimensional Growth in Heterostructures with Strained SiGe Sublayers

A. Novikov, D. Yurasov, M. Shaleev, 2010 .

Influence of elastic strains in sublayers on the critical thickness of the Stranski-Krastanow transition for the GeSi/Si(001) system

D. N. Lobanov, V. V. Ulyanov, A. Nikiforov, 2009 .

A New Limitation of the Depth Resolution in TOF-SIMS Elemental Profiling: the Influence of a Probing Ion Beam

M. Drozdov, P. Yunin, A. Novikov, 2018 .

Recovery of SIMS depth profiles with account for nonstationary effects

M. Drozdov, P. Yunin, Y. Drozdov, 2014 .

Quantitative depth profiling of Si1-xGex structures by time-of-flight secondary ion mass spectrometry and secondary neutral mass spectrometry

A. Csík, K. Vad, M. Drozdov, 2016, 1701.01612.

Quantitative calibration and germanium SIMS depth profiling in GexSi1 − x/Si heterostructures

M. Drozdov, P. Yunin, A. Novikov, 2014 .

TOF-SIMS 5 instrument sensitivity to matrix elements in GeSi Layers: Analysis based on recording of complex secondary ions

D. N. Lobanov, M. Drozdov, A. Novikov, 2011 .

Secondary cluster ions Ge2− and Ge3−for improving depth resolution of SIMS depth profiling of GeSi/Si heterostructures

D. N. Lobanov, M. Drozdov, A. Novikov, 2010 .

Method for taking into account the shift parameter in the deconvolution of the depth composition distribution of semiconductor structures from SIMS depth profiles

M. Drozdov, P. Yunin, A. Novikov, 2012 .

Nonlinear calibration curves in secondary ion mass spectrometry for quantitative analysis of gesi heterostructures with nanoclusters

M. Drozdov, P. Yunin, A. Novikov, 2016 .

A new approach to the diagnostics of nanoislands in GexSi1 − x/Si heterostructures by secondary ion mass spectrometry

D. N. Lobanov, M. Drozdov, P. Yunin, 2014 .