Xiaoyan Wang

AlxGa1-xN solar-blind photodetectors grown by low pressure MOCVD

H. Xiao, Cuimei Wang, Xiaoliang Wang, 2009 .

Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

Xinhua Wang, Yang Cui-bai, H. Xiao, 2007 .

Structural and optical properties of AlxGa1 − xN/AlyGa1 − yN multiple quantum wells for deep ultraviolet emission

H. Xiao, Cuimei Wang, Xiaoliang Wang, 2009 .

Effects of growth temperature of AlGaN buffer layer on the properties of Al0.58Ga0.42N epilayer by NH3‐MBE

Yiping Zeng, H. Xiao, Xiaoliang Wang, 2007 .

Growth and Structural Properties of InAlGaN Quaternary Alloys on Sapphire Substrates by RF-MBE

Zhan-guo Wang, H. Xiao, Bao-Zhu Wang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

AlGaN/GaN/InGaN/GaN DH‐HEMTs structure with an AlN interlayer grown by MOCVD

H. Xiao, Cuimei Wang, Xiaoliang Wang, 2008 .

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Xiaoyan Wang, Xiaoliang Wang, Baozhu Wang, 2008, Microelectron. J..

High responsivity ultraviolet photodetector based on crack-free GaN on Si (111)

Yiping Zeng, H. Xiao, Xiaoliang Wang, 2007 .

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Zanguo Wang, Yiping Zeng, H. Xiao, 2007 .