G. Hu

发表

AlxGa1-xN solar-blind photodetectors grown by low pressure MOCVD

H. Xiao, Cuimei Wang, Xiaoliang Wang, 2009 .

Hydrogen sensors based on Pt-AlGaN/GaN back-to-back Schottky diode

Xinhua Wang, Yang Cui-bai, H. Xiao, 2007 .

Structural and optical properties of AlxGa1 − xN/AlyGa1 − yN multiple quantum wells for deep ultraviolet emission

H. Xiao, Cuimei Wang, Xiaoliang Wang, 2009 .

MOCVD grown AlGaN/AlN/GaN HEMT structure with compositionally step-graded AlGaN barrier layer

W. Luo, Xinhua Wang, Xiaoliang Wang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

AlGaN/GaN/InGaN/GaN DH‐HEMTs structure with an AlN interlayer grown by MOCVD

H. Xiao, Cuimei Wang, Xiaoliang Wang, 2008 .

1-mm gate periphery AlGaN/AlN/GaN HEMTs on SiC with output power of 9.39 W at 8 GHz

W. Luo, H. Xiao, Zhanhong Ma, 2007 .

Characteristics of InGaN Channel HEMTs Grown by MOCVD

W. Luo, Xinyu Liu, Yiping Zeng, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

Influence of Al content on electrical and structural properties of Si-doped AlxGa1-xN/GaN HEMT structures

Cuimei Wang, Xiaoliang Wang, Junxi Wang, 2006 .

The influence of 1 nm AlN interlayer on properties of the Al0.3Ga0.7N/AlN/GaN HEMT structure

Xiaoyan Wang, Xiaoliang Wang, Baozhu Wang, 2008, Microelectron. J..

MOCVD-grown high-mobility Al0.3Ga0.7N/AlN/GaN HEMT structure on sapphire substrate

Zhan-guo Wang, H. Xiao, Cuimei Wang, 2007 .

Effects of doping on the crystalline quality and composition distribution in InGaN/GaN structure grown by MOCVD

Yiping Zeng, Zhan-guo Wang, H. Xiao, 2007 .

Growth temperature dependences of InN films grown by MOCVD

Yang Cui-bai, Zhan-guo Wang, H. Xiao, 2008 .

Photovoltaic effects in InGaN structures with p–n junctions

Jinmin Li, Cuimei Wang, Hongling Xiao, 2007 .

Investigation of optical quenching of photoconductivity in high-resistivity GaN epilayer

Zanguo Wang, Yiping Zeng, H. Xiao, 2007 .

Deep levels in high resistivity GaN epilayers grown by MOCVD

Cuimei Wang, Xiaoliang Wang, Junxi Wang, 2006 .

AlGaN/AlN/GaN/SiC HEMT structure with high mobility GaN thin layer as channel grown by MOCVD

Junxi Wang, Jinmin Li, Yiping Zeng, 2007 .

Influence of AlN interfacial layer on electrical properties of high-Al-content Al0.45Ga0.55N/GaN HEMT structure

Junxi Wang, Cuimei Wang, Xiaoliang Wang, 2006 .

The effect of AlN growth time on the electrical properties of Al0.38Ga0.62N/AlN/GaN HEMT structures

Junxi Wang, Cuimei Wang, Hongling Xiao, 2006 .

Room temperature mobility above 2100 cm2/Vs in Al0.3Ga0.7N/AlN/GaN heterostructures grown on sapphire substrates by MOCVD

Junxi Wang, Cuimei Wang, Xiaoliang Wang, 2006 .

Improved DC and RF performance of AlGaN/GaN HEMTs grown by MOCVD on sapphire substrates

Tangsheng Chen, J. M. Li, Guoxin Hu, 2005 .

Study on Mg memory effect in npn type AlGaN/GaN HBT structures grown by MOCVD

Junxi Wang, Jianping Li, Jinmin Li, 2006, Microelectron. J..

Effects of buffer layers on the stress and morphology of GaN epilayer grown on Si substrate by MOCVD

Junxi Wang, Jinmin Li, Yiping Zeng, 2007 .

Hydrogen sensors based on Pt-AlGaN/AIN/GaN Schottky diode

Junxi Wang, Jinmin Li, Xinhua Wang, 2007, SPIE/COS Photonics Asia.

Growth and characterization of AlGaN/GaN heterostructure using unintentionally doped AlN/GaN superlattices as barrier layer

Linqin Jiang, H. Xiao, Xiaoliang Wang, 2009 .

High-mobility Ga-polarity GaN achieved by NH3-MBE

Dianzhao Sun, J. M. Li, Y. Zeng, 2002 .

Persistent photoconductivity in n-type undoped high-resistivity GaN

H. Xiao, Xiaoliang Wang, Baorui Wang, 2006, 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings.

High-performance 2 mm gate width GaN HEMTs on 6H-SiC with output power of 22.4 W @ 8 GHz

Tangsheng Chen, W. Luo, Guoxin Hu, 2008 .

Growth and characterization of 0.8-µm gate length AlGaN/GaN HEMTs on sapphire substrates

Jianping Li, He Qian, Xiaoliang Wang, 2007, Science in China Series F: Information Sciences.