S. F. Rickborn

Surface and bulk characterization of thermally induced defects during silicon single wafer epitaxy

M. Goorsky, Quynh Tran, P. Feichtinger, 2002 .

Ion Implantation Effect on Dislocation Propagation in Pseudomorphically Strained P/P+ Silicon

M. Goorsky, R. Sandhu, B. Poust, 2000 .

Mechanism and kinetics of the shock‐tube decomposition of vinylsilane

H. O'neal, S. F. Rickborn, D. Coffey, 1984 .

The kinetics and mechanism of the shock induced gas phase decomposition of ethylsilane

H. O'neal, M. A. Ring, S. F. Rickborn, 1984 .

Shock-induced kinetics of the disilane decomposition and silylene reactions with trimethylsilane and butadiene

H. O'neal, M. A. Ring, S. F. Rickborn, 1982 .

Kinetic and product studies of the thermal decomposition of dimethylsilane in a single-pulse shock tube and in a stirred flow reactor

H. O'neal, D. S. Rogers, S. F. Rickborn, 1986 .