Shiyan Li

Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs

S. Bai, Yun Li, Shiyan Li, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Research of 3.3kV, 60A H-Bridge High-Voltage SiC Diode Modules

Ao Liu, S. Bai, Gang Chen, 2020 .

Verification of Single-Pulse Avalanche Failure Mechanism for Double-Trench SiC Power MOSFETs

Weifeng Sun, Siyang Liu, Jiaxing Wei, 2021, IEEE Journal of Emerging and Selected Topics in Power Electronics.

High temperature performance of 6500V 4H-SiC MOSFET With embedded schottky barrier diode

Bo Zhang, Y. Zhang, Shiyan Li, 2022, 2022 6th IEEE Electron Devices Technology & Manufacturing Conference (EDTM).

Development of 1.7 kV $40 \mathrm{m}\Omega$ 4H-SiC Power DMOSFETs

Longxing Shi, S. Bai, Shiyan Li, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Development of 4.5 mΩ-cm2, 1.2 kV 4H-SiC power DMOSFETs

S. Bai, Shiyan Li, Hao Liu, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Fabrication of Low Parasitic 750V/800A 4H-SiC Power MOSFET module

Shiyan Li, Deping Wang, F. Hao, 2023, 2023 20th China International Forum on Solid State Lighting & 2023 9th International Forum on Wide Bandgap Semiconductors (SSLCHINA: IFWS).

Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Chenxi Fei, S. Bai, Shiyan Li, 2020, Journal of Semiconductors.