Hao Liu

Simulation, fabrication and characterization of 6500V 4H-SiC power DMOSFETs

S. Bai, Yun Li, Shiyan Li, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Threshold Voltage Instability of 1200V SiC MOSFET Devices

Ao Liu, S. Bai, Tongtong Yang, 2018, 2018 15th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Influences of pre-oxidation nitrogen implantation and post-oxidation annealing on channel mobility of 4H-SiC MOSFETs

Chenxi Fei, S. Bai, Hao Liu, 2020 .

Experimental Comparison of a New 1.2 kV 4H-SiC Split-Gate MOSFET with Conventional SiC MOSFETs in Terms of Reliability Robustness

Longxing Shi, Siyang Liu, Jiaxing Wei, 2023, Electronics.

Development of 4.5 mΩ-cm2, 1.2 kV 4H-SiC power DMOSFETs

S. Bai, Shiyan Li, Hao Liu, 2017, 2017 14th China International Forum on Solid State Lighting: International Forum on Wide Bandgap Semiconductors China (SSLChina: IFWS).

Low on-resistance 1.2 kV 4H-SiC power MOSFET with Ron, sp of 3.4 mΩ·cm2

Chenxi Fei, S. Bai, Shiyan Li, 2020, Journal of Semiconductors.