A. Russo

Optimization of Ion Implantation processes for 4H-SiC DIMOSFET

G. Litrico, S. Lorenti, M. A. D. Stefano, 2016 .

Ion Implantation Defects in 4H-SiC DIMOSFET

Salvo Coffa, Simona Lorenti, S. Lorenti, 2016 .

High-Resolution Two-Dimensional Imaging of the 4H-SiC MOSFET Channel by Scanning Capacitance Microscopy

F. Giannazzo, F. Roccaforte, P. Fiorenza, 2021, Nanomaterials.

Electro-mechanical modelling and experimental characterization of a high-aspect-ratio electrostatic-capacitive MEMS device

M. Ferrari, V. Ferrari, R. Ardito, 2017 .

Understanding the role of threading dislocations on 4H-SiC MOSFET breakdown under high temperature reverse bias stress

F. Giannazzo, F. Roccaforte, P. Fiorenza, 2019, Nanotechnology.

Nanoscale Insights on the Origin of the Power MOSFETs Breakdown after Extremely Long High Temperature Reverse Bias Stress

C. Bongiorno, F. Giannazzo, F. Roccaforte, 2019, 2009.04846.

Experimental and Numerical Assessment of the Multi-physics Dynamic Response for a MEMS Accelerometer at Various Gaps

Marco Ferrari, Raffaele Ardito, Vittorio Ferrari, 2016 .

Impact of Threading Dislocations Detected by KOH Etching on 4H-SiC 650 V MOSFET Device Failure after Reliability Test

N. Piluso, R. Anzalone, S. Coffa, 2019 .

Correlation between MOSFETs breakdown and 4H-SiC epitaxial defects

C. Bottari, P. Fiorenza, E. Zanetti, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).