K. Adachi

Gas forming of ultra-high strength steel hollow part using air filled into sealed tube and resistance heating

Tomoyoshi Maeno, Ken-ichiro Mori, K. Adachi, 2014 .

Fabrication of Double Implanted (0001) 4H-SiC MOSFETs by using Pyrogenic Re-Oxidation Annealing

Kenji Suzuki, K. Fukuda, T. Yatsuo, 2004 .

Fabrication of 4H-SiC Double-Epitaxial MOSFETs

Kenji Suzuki, K. Fukuda, T. Yatsuo, 2004 .

TCAD Evaluation of Double Implanted 4H-SiC Power Bipolar Transistors

A. O'Neill, C. M. Johnson, N. Wright, 2000 .

Hot Electron Induced Current Collapse in AlGaN/GaN HEMTs

M. Shimizu, H. Okumura, A. Nakajima, 2007 .

Improvement of unipolar power device performance using a polarization junction

Kazuhiro Adachi, Hajime Okumura, Akira Nakajima, 2006 .

8.5-m cm 600-V Double-Epitaxial MOSFETs in 4H-SiC

K. Fukuda, T. Yatsuo, S. Harada, 2004 .

An ultra-low R/sub ons/ in 4H-SiC vertical MOSFET: buried channel double-epitaxial MOSFET

K. Adachi, K. Arai, S. Harada, 2004, 2004 Proceedings of the 16th International Symposium on Power Semiconductor Devices and ICs.

Single Material Ohmic Contacts Simultaneously Formed on the Source/P-Well/Gate of 4H-SiC Vertical MOSFETs

H. Okushi, T. Yatsuo, S. Tanimoto, 2003 .

High-quality schottky and ohmic contacts in planar 4H-SiC metal semiconductor field-effect transistors and device performance

H. Okushi, S. Tanimoto, K. Arai, 2004 .