N. Suzumura

Impact of Al in Cu alloy interconnects on electro and stress migration reliabilities

A. Uedono, K. Asai, K. Maekawa, 2008 .

Comprehensive TDDB lifetime prediction methodology for intrinsic and extrinsic failures in Cu interconnect dielectrics

T. Furusawa, E. Murakami, N. Suzumura, 2013 .

Cu Dual-Damascene Interconnects with Direct Chemical Mechanical Polishing Process on Porous Low-k Film

D. Kodama, M. Fujisawa, H. Miyatake, 2010 .

A new aspect of time-dependent clustering model for non-uniform dielectric TDDB

H. Aono, N. Suzumura, M. Ogasawara, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).

Effects of Ru-Ta Alloy Barrier on Cu Filling and Reliability for Cu Interconnects

K. Asai, K. Maekawa, M. Kojima, 2008, 2008 International Interconnect Technology Conference.

Suppression of Stress-Induced Voiding by Controlling Microstructure of Cu Electroplated Films

K. Maekawa, M. Fujisawa, Ryuji Shibata, 2013 .

Comprehensive lifetime prediction for intrinsic and extrinsic TDDB failures in Cu/Low-k interconnects

T. Ouchi, K. Makabe, E. Murakami, 2011, 2011 IEEE International Interconnect Technology Conference.

A New TDDB Degradation Model Based on Cu Ion Drift in Cu Interconnect Dielectrics

K. Makabe, E. Murakami, N. Suzumura, 2006, 2006 IEEE International Reliability Physics Symposium Proceedings.

Study on vertical TDDB degradation mechanism and its relation to lateral TDDB in Cu/low-k damascene structures

M. Ogasawara, N. Suzumura, T. Furuhashi, 2014, 2014 IEEE International Reliability Physics Symposium.