G. Gautherin

发表

Some trends in preparing film structures by ion beam methods

C. Weissmantel, G. Gautherin, 1978 .

Angular distributions of heavy particles emitted from a Si target during an ion beam sputter process

C. Pellet, G. Gautherin, C. Schwebel, 1986 .

Low Temperature Deposition of Silicon Nitride by Reactive Ion‐Beam Sputtering

D. Bouchier, A. Bosseboeuf, B. Agius, 1983 .

Investigation of ion‐beam‐sputtered Nb‐Ti thin films by complementary use of backscattering and nuclear‐reaction microanalysis

D. Bouchier, B. Agius, S. Rigo, 1978 .

Deposition of Tungsten Boride by Ion Beam Sputtering

V. Stambouli, D. Bouchier, F. Meyer, 1990 .

Low-pressure oxidation of silicon stimulated by low-energy electron bombardment

B. Agius, P. Collot, S. Rigo, 1985 .

Epitaxial growth of single-crystal Si1−xGex on Si(100) by ion beam sputter deposition

F. Meyer, M. Eizenberg, C. Pellet, 1990 .

Ion energy effects on the intrinsic stress in BxNy layers deposited by ion-beam-assisted evaporation

V. Stambouli, D. Bouchier, O. Burat, 1990 .

Epitaxial growth of yttria‐stabilized zirconia films on silicon by ultrahigh vacuum ion beam sputter deposition

C. Pellet, P. Legagneux, J. Siejka, 1988 .

Thermal Oxidation in Wet Oxygen of Reactive Ion‐Beam Sputter‐Deposited Silicon Nitride Films

D. Bouchier, A. Bosseboeuf, G. Gautherin, 1991 .

WNx films prepared by reactive ion-beam sputter deposition

F. Meyer, A. Bosseboeuf, G. Gautherin, 1991 .

Effects of impurities on the interface of ion beam sputtered tungsten with silicon

D. Bouchier, F. Meyer, G. Gautherin, 1991 .

Growth of silicon homoepitaxial thin films by ultrahigh vacuum ion beam sputter deposition

F. Meyer, C. Pellet, G. Gautherin, 1986 .

Superconducting properties of YBa2Cu3O7 − x thin films deposited on silicon covered by epitaxial stabilized ZrO2

J. Pluta, M. Brunel, P. Muret, 1989 .

Characterization and growth mechanisms of boron nitride films synthesized by ion-beam-assisted deposition

V. Stambouli, D. Bouchier, O. Burat, 1990 .

Formation of metastable hydrogen atoms by charge exchange of protons in cesium vapor

A. Schlachter, G. Gautherin, V. N. Tuan, 1974 .

Fraction of hydrogen atoms in the metastable 2s state by charge exchange of protons in cesium vapor

A. Schlachter, G. Gautherin, V. N. Tuan, 1974 .

Some properties of the ion beam from a source of duoplasmatron type

A. Septier, G. Gautherin, F. Prangere, 1965 .

Ion beam sputtering deposition of tungsten: Energy and mass effects of primary ions

V. Stambouli, F. Meyer, C. Pellet, 1989 .

Small, simple and high efficiency arsenic ion source

C. Lejeune, G. Gautherin, 1984 .

5 – HIGH-VACUUM DEPOSITION METHODS INVOLVING SUPERTHERMAL FREE PARTICLES

D. Bouchier, D. Bouchier, G. Gautherin, 1985 .

Study of the energy spectra of the charged particles emitted by a duoplasmatron-type discharge

A. Septier, C. Lejeune, G. Gautherin, 1969 .

Emittance and Brightness of Multiply-Charged Ion Beams from Duopigatron and Duoplasmatron Sources

J. Gilles, J. Grandchamp, J. Aubert, 1976, IEEE Transactions on Nuclear Science.

Low-energy ion gun (5-50 eV) for the study of the discharge-surface interactions

C. Lejeune, G. Gautherin, 1976 .