C. Ashman

发表

Investigation of Drain Current Saturation in 4H-SiC MOSFETs

N. Goldsman, A. Lelis, D. Habersat, 2007 .

Anomalous lattice expansion of coherently strained SrTiO 3 thin films grown on Si ( 001 ) by kinetically controlled sequential deposition

J. Woicik, C. Hellberg, P. Ryan, 2006 .

Ab-initio simulations on growth and interface properties of epitaxial oxides on silicon

K. Schwarz, P. Bloechl, C. Ashman, 2005, cond-mat/0504256.

The interface between silicon and a high-k oxide

K. Schwarz, P. Blöchl, C. Ashman, 2004, Nature.

First-principles calculations of strontium on Si(001)

K. Schwarz, P. Bloechl, C. Ashman, 2003, cond-mat/0308621.

Band alignment at the La2Hf2O7∕(001)Si interface

S. Spiga, M. Fanciulli, A. Dimoulas, 2006 .

Ferroelectricity in strained Ca_{0.5}Sr_{0.5}TiO_{3} from first principles

C. Hellberg, S. Halilov, C. Ashman, 2010, 1007.4210.

Nitrogen adsorption phases on the 4H–SiC(0 0 0 1) Si-face

G. Pennington, C. Ashman, 2008 .

Orientational Effects on the Electronic Structure and Polarization in Sc3N@C80.

S. Halilov, C. Ashman, 2022, The journal of physical chemistry. A.

First-principles study of oxygen adsorption on the nitrogen-passivated 4H-SiC (0001) silicon face

G. Pennington, C. Ashman, 2009 .

Chemistry of La on the Si(001) surface from first principles

K. Schwarz, P. Blöchl, C. Ashman, 2004 .

Nitrogen passivation of (0001) 4H-SiC silicon-face dangling bonds

G. Pennington, C. Ashman, 2007 .