Yu Sun

Advancement in Charge-Trap Flash memory technology

Mark Randolph, Yu Sun, Yoram Betser, 2013, 2013 5th IEEE International Memory Workshop.

Transistors with floating roadblockers as selector gates use forming nand flash memory and bias method to

Yu Sun, Chi Chang, Chung-You Hu, 1997 .

A Novel FN Erasable Undercut Device Containing Two Physically Separated Nitride Storage Nodes Per Cell Suitable for Advanced NOR Flash Memory Technology

T. Thurgate, Sung-Yong Chung, M. Randolph, 2011, 2011 3rd IEEE International Memory Workshop (IMW).