Hajime Okumura

发表

WITHDRAWN: Microscopic investigation of SiO2/SiC interface using super-higher-order scanning nonlinear dielectric microscopy

Y. Tanaka, Norimichi Chinone, Ryoji Kosugi, 2015 .

Evaluation of drain current decrease by AC gate bias stress in commercially available SiC MOSFETs

Hiroshi Yano, Shinsuke Harada, Hajime Okumura, 2017, 2017 29th International Symposium on Power Semiconductor Devices and IC's (ISPSD).

超高次走査型非線形誘電率顕微鏡を用いた局所深準位過渡分光法【Powered by NICT】

Yasunori Tanaka, Norimichi Chinone, Ryoji Kosugi, 2016 .

Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

Atsushi Tanaka, Toshihiko Hayashi, Katsunori Asano, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Electrical Characteristics of Interface Defects in Oxides Grown at 1200℃ in Dry Oxygen Ambient on Silicon Carbide and Their

Tetsuo Takahashi, Hajime Okumura, Hidekazu Tsuchida, 2003 .

Novel field plate structure of AlGaN/GaN HEMTs

Hajime Okumura, Akira Nakajima, Mitsuaki Shimizu, 2007 .

Different origins of the yellow luminescence in as-grown high-resistance GaN and unintentional-doped GaN films

Feng Xu, Z. J. Yang, Hajime Okumura, 2010 .

Accurate evaluation of fast threshold voltage shift for SiC MOS devices under various gate bias stress conditions

Hiroshi Yano, Shinsuke Harada, Hajime Okumura, 2017 .

High Breakdown Voltage AlGaN/GaN MIS-HEMT with SiN and TiO2 Gate Insulator

Hiromichi Ohashi, Hajime Okumura, Yoshiki Yano, 2006 .

Improvement of unipolar power device performance using a polarization junction

Kazuhiro Adachi, Hajime Okumura, Akira Nakajima, 2006 .

Effect of Current-Spreading Layer Formed by Ion Implantation on the Electrical Properties of High-Voltage 4H-SiC p-Channel IGBTs

Kenji Fukuda, Hajime Okumura, Manabu Takei, 2014 .

Gate-Area Dependence of SiC Thermal Oxides Reliability

Kenji Fukuda, Hajime Okumura, Mitsuo Okamoto, 2008 .

Threshold Voltage Instability in 4H-SiC MOSFETs with Nitrided Gate Oxide Revealed by Non-relaxation Method

Kenji Fukuda, Shinsuke Harada, Hajime Okumura, 2015 .

First experimental demonstration of SiC super-junction (SJ) structure by multi-epitaxial growth method

Tsutomu Yatsuo, Ryoji Kosugi, Hajime Okumura, 2014, 2014 IEEE 26th International Symposium on Power Semiconductor Devices & IC's (ISPSD).

Recombination dynamics of localized excitons in cubic InxGa1−xN/GaN multiple quantum wells grown by radio frequency molecular beam epitaxy on 3C–SiC substrate

Shuji Nakamura, S. P. DenBaars, Hajime Okumura, 2003 .

Self-Aligned Formation of the Trench Bottom Shielding Region in 4H-SiC UMOSFETs

Keiko Ariyoshi, Shinsuke Harada, Hajime Okumura, 2015 .

13-kV, 20-A 4H-SiC PiN Diodes for Power System Applications

Kenji Fukuda, Toshihiko Hayashi, Makoto Mizukami, 2014 .

Effects of interface state density on 4H-SiC n-channel field-effect mobility

Hajime Okumura, Hironori Yoshioka, Yasunori Tanaka, 2014 .

Power electronics innovation by Silicon Carbide power semiconductor devices

Hajime Okumura, 2014, 2014 IEEE International Meeting for Future of Electron Devices, Kansai (IMFEDK).

A roadmap for future wide bandgap semiconductor power electronics

Hajime Okumura, H. Okumura, 2015 .

Influence of inn mole fraction on the recombination processes of localized excitons in strained cubic InxGa1-xN/GaN multiple quantum wells

Shuji Nakamura, S. P. DenBaars, Hajime Okumura, 2003 .

Threshold-voltage instability in 4H-SiC MOSFETs with nitrided gate oxide revealed by non-relaxation method

Kenji Fukuda, Shinsuke Harada, Hajime Okumura, 2015 .

Ultrahigh voltage SiC bipolar devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2013, The 1st IEEE Workshop on Wide Bandgap Power Devices and Applications.

Quantitative Analysis of Nanoscale Step Dynamics in High-Temperature Solution-Grown Single Crystal 4H-SiC via In Situ Confocal Laser Scanning Microscope

Shingo Maruyama, Tomohisa Kato, Hajime Okumura, 2017 .

Electrical properties of AlGaN∕GaN heterostructures grown on vicinal sapphire (0001) substrates by molecular beam epitaxy

Hajime Okumura, N. Nakamura, K. Furuta, 2006 .

Development of Ultrahigh-Voltage SiC Devices

Kenji Fukuda, Toshihiko Hayashi, Tsunenobu Kimoto, 2015, IEEE Transactions on Electron Devices.

3.3-kV-Class 4H-SiC MeV-Implanted UMOSFET With Reduced Gate Oxide Field

Yusuke Kobayashi, Keiko Ariyoshi, Shinsuke Harada, 2016, IEEE Electron Device Letters.

Lattice-matched InAlN/GaN two-dimensional electron gas with high mobility and sheet carrier density by plasma-assisted molecular beam epitaxy

Hajime Okumura, Yoshiki Yano, Nakao Akutsu, 2007 .

Arsenic mediated reconstructions on cubic (001) GaN

Peter Hacke, Hajime Okumura, Guy Feuillet, 1997 .

27.5 kV 4H-SiC PiN diode with space-modulated JTE and carrier injection control

Tsunenobu Kimoto, Koji Nakayama, Yuji Kiuchi, 2018, 2018 IEEE 30th International Symposium on Power Semiconductor Devices and ICs (ISPSD).

Coexistence of Small Threshold Voltage Instability and High Channel Mobility in 4H-SiC(0001) Metal–Oxide–Semiconductor Field-Effect Transistors

Kenji Fukuda, Hajime Okumura, Noriyuki Iwamuro, 2012 .

Present Status and Future Prospect of Widegap Semiconductor High-Power Devices

Hajime Okumura, H. Okumura, 2006 .

Reduction of the threading dislocation density in GaN films grown on vicinal sapphire (0001) substrates

Hirofumi Matsuhata, Hajime Okumura, H. Okumura, 2005 .

Impact of Vicinal Sapphire (0001) Substrates on the High-Quality AlN Films by Plasma-Assisted Molecular Beam Epitaxy

Hajime Okumura, M. Shimizu, H. Okumura, 2003 .