James F. Gibbons

发表

The Relationship between Stanford and Silicon Valley: a Dean's Perspective

James F. Gibbons, 2000 .

Off-Campus Higher Education Engineering Instruction Using Videotape. Final Report.

James F. Gibbons, 1976 .

Element in Broadband Amplifiers

James F. Gibbons, John A. Archer, Mikhel Purnaiya, 1968 .

Epitaxial growth and processing of Si1-xGex/Si for heterojunction bipolar transistors using rapid thermal techniques

Judy L. Hoyt, T. Ghani, James F. Gibbons, 1992, Other Conferences.

Circuit Simulation Of Three-Dimensional Metal Oxide Semiconductor Field Effect Transistor (MOSFET) Device Structures In Beam-Recrystallized Polysilicon Films

James T. Walker, James F. Gibbons, Martin D. Giles, 1983, Photonics West - Lasers and Applications in Science and Engineering.

Use of Transistor-Simulated Inductance as an Interstate Element in Broadband Amplifiers

James F. Gibbons, John A. Archer, G. M. Purnaiya, 1968 .

Laser and electron-beam solid interactions and materials processing : proceedings of the Materials Research Society Annual Meeting, November 1980, Copley Plaza Hotel, Boston, Massachusetts, U.S.A.

James F. Gibbons, Thomas W. Sigmon, L. D. Hess, 1981 .

Semiconductor electronics / by James F. Gibbons

James F. Gibbons, 1966 .

Historical perspectives on ion implantation

James F. Gibbons, J. Gibbons, 1987 .

Reduction in misfit dislocation density by the selective growth of Si1−xGex/Si in small areas

Judy L. Hoyt, M. P. Scott, James F. Gibbons, 1990 .

An application of the Boltzmann transport equation to ion range and damage distributions in multilayered targets

James F. Gibbons, L. A. Christel, J. Gibbons, 1980 .

Temperature distributions produced in semiconductors by a scanning elliptical or circular cw laser beam

James F. Gibbons, R. B. Gold, Y. I. Nissim, 1980 .

Computer Model of the Temperature and Carrier Concentration Induced in Si by Nanosecond and Picosecond Laser Pulses

James F. Gibbons, A. Lietoila, 1980 .

Projected range statistics: Semiconductors and related materials

James F. Gibbons, W. S. Johnson, William S. Johnson, 1975 .

Computer Aided Design of Integrated Circuit Fabrication Processes for VLSI Devices

Robert W. Dutton, James D. Meindl, James D. Plummer, 1981 .

Metastable As‐concentrations in Si achieved by ion implantation and rapid thermal annealing

James F. Gibbons, R. B. Gold, Thomas W. Sigmon, 1981 .

Projected range statistics. Semiconductors and related materials. 2nd edition

James F. Gibbons, W. S. Johnson, William S. Johnson, 1975 .

Characterization of p-N Si/sub 1-x/Ge/sub x//Si heterojunctions grown by limited reaction processing

Judy L. Hoyt, M. P. Scott, S. S. Laderman, 1988 .

Displacement criterion for amorphization of silicon during ion implantation

James F. Gibbons, Thomas W. Sigmon, L. A. Christel, 1981 .

Stoichiometric disturbances in ion implanted compound semiconductors

James F. Gibbons, L. A. Christel, J. Gibbons, 1981 .

Admittance spectroscopy measurements of band offsets in Si/Si1−xGex/Si heterostructures

Judy L. Hoyt, James F. Gibbons, Theodore I. Kamins, 1992 .

Enhanced-Mobility Deep Submicron Strained-Si n-MOSFETs

Judy L. Hoyt, James F. Gibbons, Kern Rim, 1998 .

Evaluation of the valence band discontinuity of Si/Si/sub 1-x/Ge/sub x//Si heterostructures by application of admittance spectroscopy to MOS capacitors

Shinichi Takagi, Judy L. Hoyt, James F. Gibbons, 1998 .

Bandgap and transport properties of Si/sub 1-x/Ge/sub x/ by analysis of nearly ideal Si/Si/sub 1-x/Ge/sub x//Si heterojunction bipolar transistors

Judy L. Hoyt, James F. Gibbons, C. A. King, 1989 .

Thin, highly doped layers of epitaxial silicon deposited by limited reaction processing

James C. Sturm, James F. Gibbons, J. Sturm, 1986 .

Thin film MOSFET's fabricated in laser-annealed polycrystalline silicon

Krishna C. Saraswat, James F. Gibbons, Theodore I. Kamins, 1979 .

Annealing of Hg1−xCdxTe: Hg loss rates and annealing of ion implantation damage

W. G. Opyd, James F. Gibbons, T. J. Magee, 1983 .

Minority‐carrier properties of thin epitaxial silicon films fabricated by limited reaction processing

James C. Sturm, James F. Gibbons, C. M. Gronet, 1986 .

cw laser recrystallization of 〈100〉 Si on amorphous substrates

James F. Gibbons, T. J. Magee, K. F. Lee, 1979 .

Hg loss rate limitation in HgCdTe thermal processing

W. G. Opyd, James F. Gibbons, Thomas W. Sigmon, 1985 .

Limited reaction processing: Silicon epitaxy

James F. Gibbons, J. Gibbons, C. M. Gronet, 1985 .

Crystal structure and thermal oxidation of laser‐recrystallized polycrystalline silicon

James F. Gibbons, Theodore I. Kamins, K. F. Lee, 1980 .

Growth of GeSi/Si strained‐layer superlattices using limited reaction processing

W. G. Opyd, Robert Hull, James F. Gibbons, 1987 .

Estimation of impurity profiles in ion‐implanted amorphous targets using joined half‐Gaussian distributions

James F. Gibbons, J. Gibbons, S. Mylroie, 1973 .

Solid solubility of As in Si as determined by ion implantation and cw laser annealing

James F. Gibbons, T. J. Magee, Jongill Hong, 1979 .

High frequency Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors

Judy L. Hoyt, Krzysztof Nauka, M. P. Scott, 1989, International Technical Digest on Electron Devices Meeting.

Si/Si/sub 1-x/Ge/sub x/ heterojunction bipolar transistors fabricated by limited reaction processing

Judy L. Hoyt, Krzysztof Nauka, M. P. Scott, 1988, Technical Digest., International Electron Devices Meeting.

cw laser anneal of polycrystalline silicon: Crystalline structure, electrical properties

James F. Gibbons, Levy Gerzberg, T. J. Magee, 1978 .

Growth of alternating 〈100〉/〈111〉‐oriented II‐VI regions for quasi‐phase‐matched nonlinear optical devices on GaAs substrates

Judy L. Hoyt, M. L. Bortz, M. M. Fejer, 1994 .

Computer-Aided Engineering of Semiconductor Integrated Circuits.

Robert W. Dutton, Krishna C. Saraswat, James D. Meindl, 1978 .

Tutored Videotape Instruction.

James F. Gibbons, 1977 .