Sergiu Clima

发表

Modeling RRAM SET and RESET statistics with guidelines for optimized operation

Guido Groeseneken, Dirk Wouters, Malgorzata Jurczak, 2013, VLSIT 2013.

Stochastic Computing Based on Volatile GeSe Ovonic Threshold Switching Selectors

Robin Degraeve, Jian Fu Zhang, Wei Dong Zhang, 2020, IEEE Electron Device Letters.

Invited) Advanced Dielectrics Targeting 2X DRAM MIM Capacitors

Min-Soo Kim, Ben Kaczer, Marc Aoulaiche, 2013 .

GeSe-Based Ovonic Threshold Switching Volatile True Random Number Generator

Robin Degraeve, Jian Fu Zhang, Zheng Chai, 2020, IEEE Electron Device Letters.

SrTiO3 for sub-20 nm DRAM technology nodes—characterization and modeling

Zhigang Ji, Ben Kaczer, Malgorzata Jurczak, 2014 .

Modeling challenges in nanoelectronics: an atomistic point of view

Stefan De Gendt, Marc Heyns, Wim Magnus, 2012 .

Doped GeSe materials for selector applications

Bogdan Govoreanu, Gouri Sankar Kar, Sergiu Clima, 2017, 2017 47th European Solid-State Device Research Conference (ESSDERC).

Complementary Role of Field and Temperature in Triggering ON/OFF Switching Mechanisms in ${\rm Hf}/{\rm HfO}_{2}$ Resistive RAM Cells

Malgorzata Jurczak, Dirk J. Wouters, Bogdan Govoreanu, 2013, IEEE Transactions on Electron Devices.

New Insights into the Imprint Effect in FE-HfO2 and its Recovery

B. Kaczer, J. Van Houdt, D. Linten, 2019, 2019 IEEE International Reliability Physics Symposium (IRPS).

Enhancement of CBRAM performance by controlled formation of a hourglass-shaped filament

Gouri Sankar Kar, Sergiu Clima, Ludovic Goux, 2017, 2017 17th Non-Volatile Memory Technology Symposium (NVMTS).

Modeling and spectroscopy of ovonic threshold switching defects

Robin Degraeve, Andrea Fantini, Gouri Sankar Kar, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

Impact of mechanical strain on wakeup of HfO2 ferroelectric memory

I. De Wolf, Jan Van Houdt, Sergiu Clima, 2021, 2021 IEEE International Reliability Physics Symposium (IRPS).

First-principles thermodynamics and defect kinetics guidelines for engineering a tailored RRAM device

Robin Degraeve, Malgorzata Jurczak, Andrea Fantini, 2016 .

Endurance degradation mechanisms in TiN\Ta2O5\Ta resistive random-access memory cells

Guido Groeseneken, Robin Degraeve, Malgorzata Jurczak, 2015 .

Ultrathin Metal/Amorphous-Silicon/Metal Diode for Bipolar RRAM Selector Applications

Guido Groeseneken, Christoph Adelmann, Malgorzata Jurczak, 2014, IEEE Electron Device Letters.

SrTiOx for sub-20nm DRAM technology nodes-Characterization and modeling

B. Kaczer, Malgorzata Jurczak, Zhigang Ji, 2015 .

High-drive current (>1MA/cm2) and highly nonlinear (>103) TiN/amorphous-Silicon/TiN scalable bidirectional selector with excellent reliability and its variability impact on the 1S1R array performance

Guido Groeseneken, Christoph Adelmann, Malgorzata Jurczak, 2014, 2014 IEEE International Electron Devices Meeting.

Hf Cap Thickness Dependence in Bipolar-Switching TiN\HfO2\Hf\TiN RRAM Device

Guido Groeseneken, Dirk Wouters, Malgorzata Jurczak, 2013 .

Direct Probing of the Dielectric Scavenging-Layer Interface in Oxide Filamentary-Based Valence Change Memory.

Wilfried Vandervorst, Ilia Valov, Sergiu Clima, 2017, ACS applied materials & interfaces.

High-k dielectrics for future generation memory devices (Invited Paper)

Christoph Adelmann, Ben Kaczer, Dirk Wouters, 2009 .

Comprehensive investigation of trap-assisted conduction in ultra-thin SrTiO3 layers

B. Kaczer, Dirk Wouters, Jorge Kittl, 2009 .

Dependence of Switching Probability on Operation Conditions in GexSe1–x Ovonic Threshold Switching Selectors

Robin Degraeve, Zheng Chai, Andrea Fantini, 2019, IEEE Electron Device Letters.

Thin-Silicon Injector (TSI): An All-Silicon Engineered Barrier, Highly Nonlinear Selector for High Density Resistive RAM Applications

Christoph Adelmann, Malgorzata Jurczak, Hubert Hody, 2015, 2015 IEEE International Memory Workshop (IMW).

Microcanonical RT-TDDFT simulations of realistically extended devices.

Joost VandeVondele, Mohammad Hossein Bani-Hashemian, Mathieu Luisier, 2018, The Journal of chemical physics.

Ab initio modeling of oxygen-vacancy formation in doped-HfOx RRAM: Effects of oxide phases, stoichiometry, and dopant concentrations

Liang Zhao, Malgorzata Jurczak, Yoshio Nishi, 2015 .

Extensive reliability investigation of a-VMCO nonfilamentary RRAM: Relaxation, retention and key differences to filamentary switching

Malgorzata Jurczak, Bogdan Govoreanu, Yangyin Chen, 2016, 2016 IEEE International Reliability Physics Symposium (IRPS).