J. Li

发表

Broadband antireflection and absorption enhancement by forming nano-patterned Si structures for solar cells.

L. Xu, Y. Liu, K. J. Chen, 2011, Optics express.

Changing the size and shape of Ge island by chemical etching

Yiming Zeng, Dongfei Sun, M. Kong, 2001 .

Strain-induced morphological evolution and preferential interdiffusion in SiGe epitaxial film on Si(100) during high-temperature annealing

X. F. Liu, L. Li, J. P. Liu, 1999 .

SiC/Si heterojunction diodes fabricated by self-selective and by blanket rapid thermal chemical vapor deposition

A. Steckl, P. Yih, J. Li, 1994 .

The response of a thermoluminescent dosimeter to low energy protons in the range 30-100 keV.

C. Hsu, T. Chu, J. Li, 2001, Applied radiation and isotopes : including data, instrumentation and methods for use in agriculture, industry and medicine.

Effect of Si overgrowth on the structural and luminescence properties of Ge islands on Si(100)

J. P. Liu, M. Kong, Dianzhao Sun, 1999 .

A MAGNETIC SHIELDING STUDY OF HIGH Tc SUPERCONDUCTOR Y1, Ba2Cu307-δ

J. Wang, J. Li, X. Teng, 1988 .

Growth of crystalline 3C‐SiC on Si at reduced temperatures by chemical vapor deposition from silacyclobutane

A. Steckl, M. Loboda, C. Yuan, 1993 .

Structural characterization of nanometer Sic films grown on Si

A. Steckl, P. Pirouz, X. Ning, 1993 .

Beta Energy Dependence of LiF:Mg,Cu,P Thermoluminescent Films on Thickness of Sensitive Layer

Fengchang Wu, J. Li, G. Cai, 1992 .

High phosphorous doping and morphological evolution during Si growth by gas source molecular beam epitaxy (GSMBE)

J. P. Liu, M. Kong, D. Sun, 1999 .

Epitaxial growth of beta -SiC on Si by RTCVD with C/sub 3/H/sub 8/ and SiH/sub 4/

A. J. Steckl, A. Steckl, J. P. Li, 1992 .

Nucleation and Void Formation Mechanisms in SiC Thin Film Growth on Si by Carbonization

Andrew J. Steckl, A. Steckl, J. P. Li, 1995 .

Enhanced hydrogen desorption from Si sites during low-temperature Si1-xGex growth by disilane and solid-Ge molecular beam epitaxy

J. P. Liu, M. Kong, Decai Huang, 1999 .

Influence of phosphine flow rate on Si growth rate in gas source molecular beam epitaxy

Fubao Gao, J. M. Li, M. Kong, 2000 .

AFM Study of Nucleation and Void Formation in SiC Carbonization of Si

A. Steckl, J. Li, 1992 .

Growth of SiGe heterojunction bipolar transistor using Si2H6 gas and Ge solid sources molecular beam epitaxy

M. Kong, Yiping Zeng, Fubao Gao, 2001 .

Atomic probe imaging of β‐SiC thin films grown on (100) Si

A. Steckl, S. Mogren, M. Roth, 1992 .

Effect of Carbonization Gas Precursor on the Heteroepitaxial Growth of Sic-on-Si by Rtcvd

A. Steckl, J. Li, 1992 .

Thickness Determination of SiC ‐ on ‐ Si Thin Films by Anisotropic Reactive Ion Etching and Preferential Wet Etching

A. Steckl, P. Yih, J. Li, 1993 .

Rapid thermal chemical vapor deposition growth of nanometer-thin SiC on silicon

A. Steckl, J. Li, 1992 .

Raman Scattering Characterization of Ultrathin Films of β-SiC

H. Jackson, S. Tlali, A. Choo, 1993 .

Evolution of height distribution of Ge islands on Si(1 0 0)

Q. Gong, J. P. Liu, M. Kong, 1999 .

The effect of deposition process on the magnetic properties of coupled permalloy thin films

E. Hill, J. Li, B. Birtwistle, 1993 .

Magnetic and structural properties of permalloy‐tantalum multilayer thin films

J. Birtwistle, E. Hill, J. Li, 1991 .

Effects of annealing time and Si cap layer thickness on the Si/SiGe/Si heterostructures thermal stability

Fubao Gao, J. M. Li, M. Kong, 2001 .