H. Saitoh

发表

A lithium-ion conductive Li1.5Al0.25Ga0.25Ti1.5(PO4)3 solid electrolyte for electrochemical device

Y. Shimizu, Satoko Takase, K. Oda, 2020 .

Schottky barrier diodes fabricated on diamond mosaic wafers: Dislocation reduction to mitigate the effect of coalescence boundaries

S. Ohmagari, H. Umezawa, A. Chayahara, 2019, Applied Physics Letters.

Origin of Leakage Current in SiC Schottky Barrier Diodes at High Temperature

H. Matsunami, T. Kimoto, H. Saitoh, 2004 .

Molten KOH Etching with Na2O2 Additive for Dislocation Revelation in 4H-SiC Epilayers and Substrates

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Dislocation Revelation in Highly Doped N-Type 4H-SiC by Molten KOH Etching with Na2O2 Additive

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Low-Concentration Deep Traps in 4H-SiC Grown with High Growth Rate by Chemical Vapor Deposition

H. Matsunami, T. Kimoto, K. Danno, 2004 .

Microscopic Structure of Stepwise Threading Dislocation in 4H-SiC Substrate

T. Bessho, Y. Sugawara, Y. Ishikawa, 2012 .

A simultaneous observation of dislocations in 4H-SiC epilayer and n+-substrate by using electron beam induced current

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Dislocation Analysis in Highly Doped n-Type 4H-SiC by Using Electron Beam Induced Current and KOH+Na2O2 Etching

Y. Sugawara, Y. Ishikawa, N. Shibata, 2011 .

Si nanowire growth with ultrahigh vacuum scanning tunneling microscopy

M. Esashi, T. Ono, H. Saitoh, 1997 .

Uniformity Improvement in SiC Epitaxial Growth by Horizontal Hot-Wall CVD

H. Matsunami, T. Kimoto, H. Saitoh, 2003 .

High-Speed Growth of High-Quality 4H-SiC Bulk by Solution Growth Using Si-Cr Based Melt

K. Danno, H. Saitoh, A. Seki, 2010 .

Si nano-wire SPM probe grown by field evaporation with UHV STM

Takahito Ono, M. Esashi, M. Esashi, 1997, Proceedings IEEE The Tenth Annual International Workshop on Micro Electro Mechanical Systems. An Investigation of Micro Structures, Sensors, Actuators, Machines and Robots.

Diffusion of Transition Metals in 4H-SiC and Trials of Impurity Gettering

T. Kimoto, T. Bessho, K. Danno, 2012 .

4H-SiC Epitaxial Growth on SiC Substrates with Various Off-Angles

T. Kimoto, H. Saitoh, 2005 .

Epitaxial Growth of 4H-SiC {0001} with Large Off-Angles by Chemical Vapor Deposition

T. Kimoto, A. Manabe, H. Saitoh, 2006 .

Characterization of Surface Defects of Highly N-Doped 4H-SiC Substrates that Produce Dislocations in the Epitaxial Layer

Y. Ikuhara, T. Hirayama, Y. Sugawara, 2010 .

Diffusion and Gettering of Transition Metals in 4H-SiC

T. Kimoto, T. Bessho, K. Danno, 2012 .