K. Watanabe

Three-dimensional structures for high saturation signals and crosstalk suppression in 1.20 μm pixel back-illuminated CMOS image sensor

Y. Tateshita, T. Hirayama, S. Arakawa, 2013, 2013 IEEE International Electron Devices Meeting.

Si substrate structure for solid-state color imagers

M. Nakai, I. Takemoto, K. Watanabe, 1985, IEEE Transactions on Electron Devices.

Two types of 500 V double gate lateral N-ch bipolar-mode MOSFETs in dielectrically isolated p/sup -/ and n/sup -/ silicon islands

T. Ogura, Y. Yamaguchi, A. Nakagawa, 1988, Technical Digest., International Electron Devices Meeting.

Radical nitridation in multi-oxide process for 100 nm generation CMOS technology

A. Ono, Y. Yasuda, K. Fukasaku, 2001, 2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184).