A. Nishida

Optimized InAs quantum effect device structures grown by molecular beam epitaxy

M. Inoue, K. Yoh, H. Takeuchi, 1995 .

Electron and thermal transport in InAs single-crystal free-standing wires

M. Inoue, K. Yoh, A. Nishida, 1994 .

Quantized conductance observed at high temperatures in InAs/(AlGa)Sb quantum wires

M. Inoue, K. Yoh, A. Nishida, 1994 .

Atomic-level study of TDDB mechanism of Hf-doped SiON gate dielectrics using Cs-corrected STEM and atom probe tomography

K. Nakamae, M. Inoue, K. Eguchi, 2013, 2013 IEEE International Reliability Physics Symposium (IRPS).