Dong-Dong Jin

发表

Single-crystalline GaN nanotube arrays grown on c-Al2O3 substrates using InN nanorods as templates

Hongyuan Wei, Zhan-guo Wang, Qinsheng Zhu, 2014 .

Scattering due to anisotropy of ellipsoid quantum dots in GaAs/InGaAs single quantum well

Tao Yang, Qinsheng Zhu, Liuwan Zhang, 2013 .

Scattering due to Schottky barrier height spatial fluctuation on two dimensional electron gas in AlGaN/GaN high electron mobility transistors

Hongyuan Wei, Qinsheng Zhu, Lianshan Wang, 2013 .

Determination of polar C‐plane and nonpolar A‐plane AlN/GaN heterojunction band offsets by X‐ray photoelectron spectroscopy

Y. Hao, Qinsheng Zhu, Wei Mao, 2014 .

Mobility limited by cluster scattering in ternary alloy quantum wires

Qinsheng Zhu, Guipeng Liu, Shao-yan Yang, 2014 .

Two dimensional electron gas mobility limited by scattering of quantum dots with indium composition transition region in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .

Anisotropic scattering effect of the inclined misfit dislocation on the two-dimensional electron gas in Al(In)GaN/GaN heterostructures

Hongyuan Wei, Qinsheng Zhu, Liuwan Zhang, 2014 .

Electron scattering in GaAs/InGaAs quantum wells subjected to an in-plane magnetic field

Tao Yang, Qinsheng Zhu, Liuwan Zhang, 2013 .

Calculation of discrepancies in measured valence band offsets of heterojunctions with different crystal polarities

Y. Hao, Qinsheng Zhu, Wei Mao, 2012 .

Scattering due to large cluster embedded in quantum wells

Qinsheng Zhu, Guijuan Zhao, Guipeng Liu, 2013 .