Kazufumi Watanabe

发表

A new 0.8μm CMOS image sensor with low RTS noise and high full well capacity

Alan Chih-Wei Hsiung, L. Grant, Y. Jung, 2019 .

A Large-Signal MOSFET Model Based on Transient Carrier Response for RF Circuits

Koji Kotani, Tadahiro Ohmi, Shigetoshi Sugawa, 2004 .

Accurate Temperature Drift model of MOSFETs Mobility for Analog Circuits

Koji Kotani, Tadahiro Ohmi, Shigetoshi Sugawa, 2004 .

Preparation of Tungsten Nitride Film by CVD Method Using WF 6

T. Nakajima, N. Watanabe, Kazufumi Watanabe, 1987 .

Radial distribution of a Cd neutral ground‐state density in a positive column of a He‐Cd discharge

T. Sakurai, Kazufumi Watanabe, Shinzi Watanabe, 1981 .

PREPARATION OF ANTIMONY-PLATINUM SURFACE ALLOY ELECTRODE BY ATOM DIFFUSION IN THE SOLID PHASE

H. Matsui, Kazufumi Watanabe, 2006 .

Circuit level prediction of device performance degradation due to negative bias temperature stress

Tadahiro Ohmi, Rihito Kuroda, Akinobu Teramoto, 2007, Microelectron. Reliab..

A Technology for Reducing Flicker Noise for ULSI Applications

Kazufumi Watanabe, Shigetoshi Sugawa, Tadahiro Ohmi, 2003 .

Examination of degradation mechanism due to negative bias temperature stress from a perspective of hole energy for accurate lifetime prediction

Rihito Kuroda, Akinobu Teramoto, Kazufumi Watanabe, 2007, Microelectron. Reliab..