M. Lui

Liquid encapsulated Czochralski grown undoped p-type gallium antimonide studied by temperature-dependent Hall measurement

C. Ling, M. Lui, 2005 .

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Minglun Gong, C. Ling, C. Beling, 2004 .

Nature of the acceptor responsible for p-type conduction in liquid encapsulated Czochralski-grown undoped gallium antimonide

C. Ling, C. Beling, S. Fung, 2004 .

Acceptors in undoped gallium antimonide

C. Ling, K. Li, M. Lui, 2003 .

Gallium vacancy and the residual acceptor in undoped GaSb studied by positron lifetime spectroscopy and photoluminescence

Chengdu, Beijing, Chinese Academy of Sciences, 2002, cond-mat/0201294.

Low energy electron irradiation induced deep level defects in 6H-SiC: the implication for the microstructure of the deep levels E1/E2.

C. Ling, C. Beling, C. Yang, 2004, Physical review letters.

Electron irradiated liquid encapsulated Czochralski grown undoped gallium antimonide studied by positron lifetime spectroscopy and photoluminescence

Minglun Gong, C. Ling, C. Beling, 2004 .