J.F. Chen

Investigation of the influence of the well and the barrier thicknesses in GaSb/AlSb/GaSb/AlSb/InAs double-barrier interband tunneling structures

A. Cho, L. Yang, J.F. Chen, 1990, IEEE Electron Device Letters.

The influence of InAs layer on the negative differential resistance behaviors of the GaSb/AlSb/GaSb/AlSb/InAs double barrier resonant interband tunneling structure

A. Cho, M. Houng, Y.H. Wang, 1991, International Electron Devices Meeting 1991 [Technical Digest].

Suppression of the boron penetration induced Si/SiO/sub 2/ interface degradation by using a stacked-amorphous-silicon film as the gate structure for pMOSFET

Tan Fu Lei, Chung Len Lee, L. Chen, 1994, IEEE Electron Device Letters.