M. Takei

发表

Self-Aligned Metal Double-Gate Low-Temperature Polycrystalline Silicon Thin-Film Transistors on Non-Alkali Glass Substrate Using Diode-Pumped Solid-State Continuous Wave Laser Lateral Crystallization

N. Sasaki, A. Hara, F. Takeuchi, 2004 .

High Performance Low Temperature Polycrystalline Silicon Thin Film Transistors on Non-alkaline Glass Produced Using Diode Pumped Solid State Continuous Wave Laser Lateral Crystallization

N. Sasaki, A. Hara, Y. Ebiko, 2004 .

High-performance CMOS circuits fabricated by excimer-laser-annealed poly-Si TFTs on glass substrates

Y. Mishima, M. Takei, N. Sasaki, 2001, IEEE Electron Device Letters.

LP‐1: Late‐News Poster: Scaling Effects of Sub‐Micron Low‐Temperature Poly‐Si TFTs

K. Mishima, N. Sasaki, F. Takeuchi, 1999 .

Experimental evidence of grain-boundary related hot-carrier degradation mechanism in low-temperature poly-Si thin-film-transistors

M. Takei, T. Tsuchiya, N. Sasaki, 2003, IEEE International Electron Devices Meeting 2003.

High-performance single-crystalline-silicon TFTs on a non-alkali glass substrate

N. Sasaki, A. Hara, M. Takei, 2002, Digest. International Electron Devices Meeting,.

12.3: High Throughput CW‐Laser Lateral Crystallization for Low‐Temperature Poly‐Si TFTs and Fabrication of 16 bit SRAMs and 270MHz Shift Registers

F. Takeuchi, N. Sasaki, M. Takei, 2002 .

High performance poly-Si TFTs on a glass by a stable scanning CW laser lateral crystallization

N. Sasaki, A. Hara, Y. Mishima, 2001, International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224).

Non‐mass‐separated ion shower doping of polycrystalline silicon

Y. Mishima, M. Takei, 1994 .

High-Performance Polycrystalline Silicon Thin Film Transistors on Non-Alkali Glass Produced Using Continuous Wave Laser Lateral Crystallization

Akito Hara, Nobuo Sasaki, Katsuyuki Suga, 2002 .

Polycrystalline silicon formed by ultrahigh‐vacuum sputtering system

Y. Mishima, M. Okabe, M. Takei, 1995 .