I. G. Pichugin

发表

Growth kinetics, structure and surface morphology of AlN/α-Al2O3 epitaxial layers

A. N. Efimov, F. Bugge, M. A. Chernov, 1987 .

Chemical etching of sapphire

I. G. Pichugin, P. Prentky, L. A. Marasina, 1982 .

Preparation of InN epitaxial layers in InCl3NH3 system

M. Tlaczala, I. G. Pichugin, L. A. Marasina, 1977 .

Cathodoluminescence of undoped and Zn-doped GaN epitaxial layers

A. Pikhtin, I. G. Pichugin, A. Solomonov, 1976 .

Doping mechanism and properties of Zn‐doped GaN‐epitaxial layers

V. M. Andreev, M. Petrov, I. G. Pichugin, 1983 .

Luminescence properties of i-n, i-n-i and n-i-n structures made of epitaxial layers GaN / α-Al2O3

V. M. Andreev, M. Petrov, I. G. Pichugin, 1986 .

The Growth Kinetics and Surface Morphology of GaN Epitaxial Layers on Sapphire

M. Tlaczala, I. G. Pichugin, L. A. Marasina, 1982 .