J. Chevrier
发表
D. Delagebeaudeuf,
P. Delescluse,
M. Laviron,
1985,
IEEE Electron Device Letters.
High-mobility Ga0.47In0.53As thin epitaxial layers grown by MBE, very closely lattice-matched to InP
J. Massies,
P. Delescluse,
P. Etienne,
1982
.
The local displacement field around Co and Nb solutes in ω-phase forming bcc-Zr at high temperatures
H. Schober,
W. Petry,
O. Schärpf,
1991
.
P. Zeppenfeld,
L. Huang,
J. Chevrier,
1996
.
P. Zeppenfeld,
L. Huang,
J. Chevrier,
1996
.
J. Massies,
P. Delescluse,
P. Etienne,
1983
.
F. Livet,
T. Priem,
A. Finel,
1989
.
N. Linh,
L. Goldstein,
J. Chevrier,
1982
.
N. Linh,
M. Armand,
J. Chevrier,
1980
.
N. T. Linh,
J. Chevrier,
A. Huber,
1980
.
N. Linh,
J. Chevrier,
A. Huber,
1979
.
N. Linh,
Nuyen T. Linh,
M. Armand,
1983
.
J. Chevrier,
T. Pearsall,
T. Pearsall,
1981,
IEEE Journal of Quantum Electronics.
An infrared study of the adsorption of NO on silica-supported platinum over a wide temperature range
J. Chevrier,
B. Morrow,
L. E. Moran,
1985
.
N. Linh,
J. Chevrier,
A. Huber,
1981
.
D. Delagebeaudeuf,
J. Chevrier,
1986
.
N. Linh,
M. Armand,
J. Chevrier,
1980
.
D. Delagebeaudeuf,
P. Delescluse,
M. Laviron,
1985
.
F. Rieutord,
L. Ortega,
P. Zeppenfeld,
1997
.
P. Zeppenfeld,
J. Chevrier,
G. Cosma,
1995
.