John Tolle

发表

(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics

Wei Du, Richard A. Soref, Hameed A. Naseem, 2016 .

Si based mid-infrared GeSn photo detectors and light emitters

Wei Du, Richard A. Soref, Hameed A. Naseem, 2015, SPIE NanoScience + Engineering.

Performance measurement and evaluation of online information systems

John Tolle, 1985, CSC '85.

Transaction log analysis online catalogs

John Tolle, J. Tolle, 1983, SIGIR '83.

Germanium p-i-n photodiode on silicon for integrated photonic applications

Jay Mathews, John Tolle, John Kouvetakis, 2010, OPTO.

Monitoring and Evaluation of Information Systems Via Transaction Log Analysis

John Tolle, 1984, SIGIR.

Use of transaction analysis and probabilistic modeling for evaluation of retrieval systems

John Tolle, 1985, RIAO.

Temperature-dependent study of Si-based GeSn photoconductors

Wei Du, Richard A. Soref, Hameed A. Naseem, 2015, Photonics West - Optoelectronic Materials and Devices.

New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation)

Wei Du, Stefan Schulz, Igor P. Marko, 2017, OPTO.

A Hybrid Data-Driven and Knowledge-Driven Methodology for Estimating the Effect of Completion Parameters on the Cumulative Production of Horizontal Wells

Bianca Zadrozny, Mingqi Wu, Ligang Lu, 2018 .

Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications

Wei Du, Richard Soref, Greg Sun, 2017, OPTO.

A Machine-Learning Methodology Using Domain-Knowledge Constraints for Well-Data Integration and Well-Production Prediction

Bianca Zadrozny, Ligang Lu, Detlef Hohl, 2019, SPE Reservoir Evaluation & Engineering.

A data-driven workflow for predicting horizontal well production using vertical well logs pdf

Bianca Zadrozny, Mingqi Wu, Ligang Lu, 2017, ArXiv.

Compliant tin-based buffers for the growth of defect-free strained heterostructures on silicon

John Tolle, John Kouvetakis, Jose Menendez, 2006 .

Direct-gap photoluminescence with tunable emission wavelength in Ge1−ySny alloys on silicon

John Tolle, John Kouvetakis, Chi Xu, 2010 .

Ternary GeSiSn alloys: New opportunities for strain and band gap engineering using group-IV semiconductors

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

Wei Du, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Optics express.

Tunable band structure in diamond–cubic tin–germanium alloys grown on silicon substrates

Corey L. Bungay, David J. Smith, John Tolle, 2003 .

Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12%

Wei Du, Richard A. Soref, Wei Dou, 2016, Journal of Electronic Materials.

Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

Wei Du, Richard Soref, Wei Dou, 2019, ACS Photonics.

Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

SnGe superstructure materials for Si-based infrared optoelectronics

David Smith, John Tolle, Stefan Zollner, 2003 .

Investigation of SiGeSn/GeSn/SiGeSn Quantum Well Structures and Optically Pumped Lasers on Si

Wei Du, Richard Soref, Wei Dou, 2019, 2019 Conference on Lasers and Electro-Optics (CLEO).

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Versatile buffer layer architectures based on Ge1−xSnx alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2005 .

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Wei Du, David J. Thomson, Goran Z. Mashanovich, 2019, Front. Mater..

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Wei Du, Richard A. Soref, Joe Margetis, 2015 .

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Wei Du, Huong Tran, Joe Margetis, 2016, Optics express.

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Low-temperature pre-epitaxy surface cleaning of Si and SiGe

Roger Loo, Andriy Hikavyy, Sandeep Mehta, 2015 .

New Ge-Sn materials with adjustable bandgaps and lattice constants

John Tolle, Stefan Zollner, John Kouvetakis, 2002 .

Near IR Photodiodes with Tunable Absorption Edge Based on Ge1-y Sny Alloys Integrated on Silicon

John Tolle, John Kouvetakis, Jose Menendez, 2010 .

LASERS, OPTICS, AND OPTOELECTRONICS 2865 Single-mode solid-state single photon source based on isolated quantum dots in pillar microcavities

Costas Fotakis, Eric Moreau, C. Kalpouzos, 2001 .

Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Hameed A. Naseem, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Journal of Electronic Materials.

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Wei Du, Richard A. Soref, Wei Dou, 2017 .

Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices

John Tolle, Shui-Qing Yu, Junqi Xie, 2008 .

Optical and structural properties of SixSnyGe1−x−y alloys

John Tolle, Stefan Zollner, John Kouvetakis, 2004 .

Advances in SiGeSn technology

Richard A. Soref, John Tolle, John Kouvetakis, 2007 .

Raman scattering in Ge1−ySny alloys

John Tolle, John Kouvetakis, Christian D. Poweleit, 2007 .

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Wei Du, Richard A. Soref, Wei Dou, 2016 .

Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Wei Du, Richard A. Soref, Hameed A. Naseem, 2016 .

Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Practical B and P doping via SixSnyGe1-x-y-zMz quaternaries lattice matched to Ge: Structural, electrical, and strain behavior

John Tolle, John Kouvetakis, Jose Menendez, 2009 .