Shui-Qing Yu

发表

(Invited) Development of SiGeSn Technique Towards Mid-Infrared Devices in Silicon Photonics

Wei Du, Richard A. Soref, Hameed A. Naseem, 2016 .

Si based mid-infrared GeSn photo detectors and light emitters

Wei Du, Richard A. Soref, Hameed A. Naseem, 2015, SPIE NanoScience + Engineering.

CMOS Compatible Growth of High Quality Ge, SiGe and SiGeSn for Photonic Device Applications

Wei Du, Wei Dou, Hameed A. Naseem, 2015 .

Temperature-dependent study of Si-based GeSn photoconductors

Wei Du, Richard A. Soref, Hameed A. Naseem, 2015, Photonics West - Optoelectronic Materials and Devices.

New experimental evidence for nature of the band gap of GeSn alloys (Conference Presentation)

Wei Du, Stefan Schulz, Igor P. Marko, 2017, OPTO.

Silicon-based Ge0.89Sn0.11 photodetector and light emitter towards mid-infrared applications

Wei Du, Richard Soref, Greg Sun, 2017, OPTO.

Lateral photoconductivity of GeSn alloys

Gregory J. Salamo, Shui-Qing Yu, Yuriy I. Mazur, 2021, OPTO.

Terahertz plasmon amplification using two-dimensional electron-gas layers

Hameed A. Naseem, Shui-Qing Yu, Samir El-Ghazaly, 2012 .

Temperature dependent spectral response and detectivity of GeSn photoconductors on silicon for short wave infrared detection.

Wei Du, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Optics express.

Optical Characterization of Si-Based Ge1−xSnx Alloys with Sn Compositions up to 12%

Wei Du, Richard A. Soref, Wei Dou, 2016, Journal of Electronic Materials.

Determination and improvement of spontaneous emission quantum efficiency in GaAs/AlGaAs heterostructures grown by molecular beam epitaxy

Shui-Qing Yu, Shane Johnson, Yong-Hang Zhang, 2007 .

Optically Pumped GeSn Lasers Operating at 270 K with Broad Waveguide Structures on Si

Wei Du, Richard Soref, Wei Dou, 2019, ACS Photonics.

Investigation on the Formation and Propagation of Defects in GeSn Thin Films

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Si based GeSn photoconductors with a 1.63 A/W peak responsivity and a 2.4 μm long-wavelength cutoff

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Gain saturation and carrier distribution effects in molecular beam epitaxy grown GaAsSb∕GaAs quantum well lasers

Shui-Qing Yu, Shane Johnson, Yong-Hang Zhang, 2006 .

Study of GeSn Mid-infrared Photodetectors for High Frequency Applications

Wei Du, David J. Thomson, Goran Z. Mashanovich, 2019, Front. Mater..

Si-based Ge0.9Sn0.1 photodetector with peak responsivity of 2.85 A/W and longwave cutoff at 2.4 μm

Wei Du, Richard A. Soref, Joe Margetis, 2015 .

Systematic study of Si-based GeSn photodiodes with 2.6 µm detector cutoff for short-wave infrared detection.

Wei Du, Huong Tran, Joe Margetis, 2016, Optics express.

Competition of optical transitions between direct and indirect bandgaps in Ge1−xSnx

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Influence of photon recycling on semiconductor luminescence refrigeration

Shui-Qing Yu, Shane Johnson, Yong-Hang Zhang, 2006 .

UHV-CVD growth of high quality GeSn using SnCl4: from material growth development to prototype devices

Wei Du, Wei Dou, Hameed A. Naseem, 2019, Optical Materials Express.

Extended performance GeSn/Si(100) p-i-n photodetectors for full spectral range telecommunication applications

Shui-Qing Yu, Junqi Xie, John Kouvetakis, 2009 .

High efficiency MJ solar cells and TPV using SiGeSn materials

H. Naseem, Shui-Qing Yu, G. Sun, 2012, 2012 38th IEEE Photovoltaic Specialists Conference.

Direct Growth of Ge1−xSnx Films on Si Using a Cold-Wall Ultra-High Vacuum Chemical-Vapor-Deposition System

Wei Du, Richard A. Soref, Hameed A. Naseem, 2015, Front. Mater..

Shortwave-infrared photoluminescence from Ge1−xSnx thin films on silicon

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Material Characterization of Ge1−xSnx Alloys Grown by a Commercial CVD System for Optoelectronic Device Applications

Hameed A. Naseem, Seyed Amir Ghetmiri, Aboozar Mosleh, 2014, Journal of Electronic Materials.

Si-Based GeSn Lasers with Wavelength Coverage of 2–3 μm and Operating Temperatures up to 180 K

Wei Du, Richard A. Soref, Wei Dou, 2017 .

Room-temperature electroluminescence from Ge/Ge1-xSnx/Ge diodes on Si substrates

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Direct-bandgap GeSn grown on silicon with 2230 nm photoluminescence

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .

Ge1−ySny photoconductor structures at 1.55μm: From advanced materials to prototype devices

John Tolle, Shui-Qing Yu, Junqi Xie, 2008 .

An optically pumped 2.5 μm GeSn laser on Si operating at 110 K

Wei Du, Richard A. Soref, Wei Dou, 2016 .

Systematic study of Ge1−xSnx absorption coefficient and refractive index for the device applications of Si-based optoelectronics

Wei Du, Richard A. Soref, Hameed A. Naseem, 2016 .

Global Modeling of Active Terahertz Plasmonic Devices

Shui-Qing Yu, Hameed Naseem, Samir El-Ghazaly, 2014, IEEE Transactions on Terahertz Science and Technology.

A semi-analytical model for semiconductor solar cells

Shui-Qing Yu, Shane Johnson, Yong-Hang Zhang, 2011 .

Growth and Characterization of Epitaxial Ge1-XSnx Alloys and Heterostructures Using a Commercial CVD System

Wei Du, Richard A. Soref, Hameed A. Naseem, 2014 .