Md. Irfan Khan

Analytical Modeling of Capacitance-Voltage Characteristics of GaN Nanowire Junctionless MOSFET

Q. Khosru, Md. Irfan Khan, I. K. M. Reaz Rahman, 2020, 2020 IEEE 20th International Conference on Nanotechnology (IEEE-NANO).

A Rigorous Investigation of Electrostatic and Transport Phenomena of GaN Double-Channel HEMT

Q. Khosru, Md. Irfan Khan, I. Rahman, 2019, IEEE Transactions on Electron Devices.

Analytical Modeling of Electrostatic Characteristics of Enhancement Mode GaN Double Channel HEMT

M. Mahdia, Md. Irfan Khan, I. Rahman, 2018, 2018 IEEE 13th Nanotechnology Materials and Devices Conference (NMDC).

UV-irradiated sol-gel spin coated AZO thin films: enhanced optoelectronic properties

Md. Irfan Khan, Tasratur Reaj Neha, M. Billah, 2022, Heliyon.

Electrostatic characterization and threshold voltage modeling of inversion type InGaAs gate-all-around MOSFET

Q. D. Khosru, Md. Irfan Khan, I. R. Rahman, 2021, Journal of Computational Electronics.

Analytical drain current and performance evaluation for inversion type InGaAs gate-all-around MOSFET

Q. D. Khosru, Md. Irfan Khan, I. R. Rahman, 2021 .

Surface Potential-Based Analytical Modeling of Electrostatic and Transport Phenomena of GaN Nanowire Junctionless MOSFET

Q. Khosru, Md. Irfan Khan, I. R. Rahman, 2020, IEEE Transactions on Electron Devices.