N. Shiozaki

High-speed switching and current-collapse-free operation by GaN gate injection transistors with thick GaN buffer on bulk GaN substrates

Tetsuzo Ueda, Shinji Ujita, Hidekazu Umeda, 2016, 2016 IEEE International Electron Devices Meeting (IEDM).

X-ray Photoelectron Spectroscopy Study of Silicon Interlayer Based Surface Passivation for AlGaAs/GaAs Quantum Structures on (111) B Surfaces

H. Hasegawa, M. Akazawa, N. Shiozaki, 2006 .

Improved hysteresis in a normally-off AlGaN/GaN MOS heterojunction field-effect transistor with a recessed gate structure formed by selective regrowth

Y. Anda, T. Ueda, S. Nakazawa, 2017 .

Formation of Thin Native Oxide Layer on n-GaN by Electrochemical Process in Mixed Solution with Glycol and Water

T. Hashizume, Taketomo Sato, N. Shiozaki, 2007 .