A. Zabrodskii

发表

Scientists' contribution to the Great Victory in WWII on the example of the Leningrad (now A F Ioffe) Physical Technical Institute

A. Zabrodskii, 2013 .

In situ radiation test of silicon and diamond detectors operating in superfluid helium and developed for beam loss monitoring

E. Griesmayer, V. Eremin, C. Fabjan, 2015 .

Thermopower of transmutation-doped Ge:Ga in the region for hopping conductivity

I. P. Zvyagin, S. Egorov, A. Zabrodskii, 1997 .

Specific features of electron spin resonance in 4H-SiC in the vicinity of the insulator-metal phase transition: II. Analysis of the width and shape of lines

E. N. Mokhov, A. Zabrodskii, A. Veinger, 2004 .

Electron spin resonance in the vicinity of metal-insulator transition in compensated n-Ge:As

A. Zabrodskii, A. Veinger, T. Tisnek, 2000 .

Coulomb gap, its critical behavior, and the metal-insulator transition in doped semiconductors

A. Zabrodskii, 1996 .

Development of silicon detectors for Beam Loss Monitoring at HL-LHC

V. Eremin, F. Ravotti, J. Härkönen, 2017 .

Charge collection in Si detectors irradiated in situ at superfluid helium temperature

V. Eremin, J. Härkönen, B. Dehning, 2015 .

Fluctuation model of the high-frequency hopping electrical conductivity of moderately compensated semiconductors with hydrogenic impurities

N. A. Poklonski, A. Zabrodskii, S. A. Vyrko, 2005 .

Simulation of Low Gain Avalanche Detector characteristics based on the concept of negative feedback in irradiated silicon detectors with carrier impact ionization

V. Eremin, P. Luukka, E. Verbitskaya, 2016 .

Antiferromagnetic spin glass in doped Ge near insulator-metal transition

A. Zabrodskii, A. Veinger, T. Tisnek, 2009 .

Nanostructured antiferromagnetic spin glass in doped Ge near the insulator–metal transition

A. Zabrodskii, A. Veinger, T. Tisnek, 2008 .

Low-temperature conductivity and metal-insulator transition in compensate n-Ge

A. Zabrodskii, K. N. Zinov’eva, 2008 .

Atomic-force-microscopy visualization of Si nanocrystals in SiO2 thermal oxide using selective etching

J. Grob, R. Laiho, A. Titkov, 2004 .

Nanocomposites with mixed electronic and protonic conduction for electrocatalysis

J. Stejskal, I. Sapurina, M. Trchová, 2007 .

The dipole model of narrowing of the energy gap between the Hubbard bands in slightly compensated semiconductors

N. A. Poklonski, A. Zabrodskii, A. Zabrodskii, 2006 .

Role of electrostatic fluctuations in doped semiconductors upon the transition from band to hopping conduction (by the example of p-Ge:Ga)

N. A. Poklonski, A. Zabrodskii, S. A. Vyrko, 2016 .

A Quasi-Classical Model of the Hubbard Gap in Lightly Compensated Semiconductors

N. A. Poklonski, A. Kovalev, A. Zabrodskii, 2016 .

Electrostatic models of insulator-metal and metal-insulator concentration phase transitions in Ge and Si crystals doped by hydrogen-like impurities

N. A. Poklonski, A. Zabrodskii, S. A. Vyrko, 2004 .

Coulomb Gap and the Metal–Insulator Transition

S. V. Egorov, A. Zabrodskii, A. Andreev, 1998 .

Numerical simulation of the temperature dependence of the ionization energy of hydrogen-like impurities in semiconductors: Application to transmutation-doped Ge: Ga

S. V. Egorov, N. A. Poklonskiĭ, A. Zabrodskii, 2003 .

Microwave magnetoresistance of compensated p-Ge:Ga in the region of the insulator-metal phase transition

A. Zabrodskii, A. Veinger, T. Tisnek, 2002 .

The Coulomb gap: The view of an experimenter

A. Zabrodskii, 2001 .

Hysteresis of magnetoresistance in neutron-transmutation-doped Ge in the region of hopping transport over the Coulomb-gap states

S. V. Egorov, A. Zabrodskii, A. Chernyaev, 2000 .

A lattice model of nearest-neighbor hopping conduction and its application to neutron-doped Ge: Ga

S. Lopatin, N. A. Poklonskiĭ, A. Zabrodskii, 2000 .

Anomalously narrow Coulomb gap

D. Parsons, A. Zabrodskii, A. Andreev, 1993 .

Carbon supported polyaniline as anode catalyst: Pathway to platinum-free fuel cells

I. Sapurina, M. Kompan, V. Malyshkin, 2006, physics/0609025.

Operational voltage of silicon heavily irradiated strip detectors utilizing avalanche multiplication effect

V. Eremin, E. Verbitskaya, A. Zabrodskii, 2012 .

Transition temperature from band to hopping direct current conduction in crystalline semiconductors with hydrogen-like impurities: Heat versus Coulomb attraction

N. A. Poklonski, A. Zabrodskii, S. A. Vyrko, 2011 .

Calculation of capacitance of self-compensated semiconductors with intercenter hops of one and two electrons (by the example of silicon with radiation defects)

A. Zabrodskii, S. A. Vyrko, N. Poklonski, 2008 .

Field effect and capacitance of silicon crystals with hopping conductivity over point radiation defects pinning the Fermi level

A. Zabrodskii, S. A. Vyrko, N. Poklonski, 2007 .

Quasi-static capacitance of a weakly compensated semiconductor with hopping conduction (on the example of p-Si:B)

A. Zabrodskii, S. A. Vyrko, N. Poklonski, 2007 .

Ionization equilibrium at the transition from valence-band to acceptor-band migration of holes in boron-doped diamond

N. A. Poklonski, A. Kovalev, A. Zabrodskii, 2016 .

Coulomb gap and metal?insulator transitions in doped semiconductors

A. Zabrodskii, 1998 .

Avalanche effect in Si heavily irradiated detectors: Physical model and perspectives for application

J. Härkönen, E. Verbitskaya, A. Zabrodskii, 2011 .

The magnetoresistance of compensated Ge:As at microwave frequencies in the vicinity of the metal-insulator phase transition

A. Zabrodskii, A. Veinger, T. Tisnek, 2000 .

Effect of Compensation on Low-Temperature Spin Ordering in Ge:As Semiconductor Near the Insulator–Metal Phase Transition

A. Zabrodskii, A. Veinger, P. Semenikhin, 2020 .

Alternative Energy: from Economy to Agro-Photovoltaics

A. Bobyl, V. Davydov, V. Malyshkin, 2020, 2020 IEEE International Conference on Electrical Engineering and Photonics (EExPolytech).

Restriction on the gain in collected charge due to carrier avalanche multiplication in heavily irradiated Si strip detectors

V. Eremin, P. Luukka, Z. Li, 2013 .

Membrane-electrode assemblies with high specific power based on functionalized carbon nanotubes

A. A. Tomasov, E. Terukov, N. Zelenina, 2010 .

Generalized Radon--Nikodym Spectral Approach. Application to Relaxation Dynamics Study.

M. Kompan, O. Novikova, V. Malyshkin, 2016, 1611.07386.

Generalized Radon--Nikodym Spectral Approach. Application to Power and Energy Relaxation Dynamics

M. Kompan, O. Novikova, V. Malyshkin, 2016 .

Quasiclassical description of the nearest-neighbor hopping dc conduction via hydrogen-like donors in intermediately compensated GaAs crystals

A. Zabrodskii, S. A. Vyrko, N. Poklonski, 2010 .

Model of hopping dc conductivity via nearest neighbor boron atoms in moderately compensated diamond crystals

A. Zabrodskii, S. A. Vyrko, N. Poklonski, 2009, 1005.0111.